Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

/pdf/the-missing-memristor-found-55upit5xe7.pdf

The missing memristor found

I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Inspired by the brain’s structure, we have developed an efficient, scalable, and flexible non–von Neumann architecture that leverages contemporary silicon technology. To demonstrate, we built a 5.4-billion-transistor chip with 4096 neurosynaptic cores interconnected via an intrachip network that integrates 1 million programmable spiking neurons and 256 million configurable synapses. Chips can be tiled in two dimensions via an interchip communication interface, seamlessly scaling the architecture to a cortexlike sheet of arbitrary size. The architecture is well suited to many applications that use complex neural networks in real time, for example, multiobject detection and classification. With 400-pixel-by-240-pixel video input at 30 frames per second, the chip consumes 63 milliwatts.

A million spiking-neuron integrated circuit with a scalable communication network and interface

Patterned domain structures were constructed in LiNbO3 using scanning force microscopy. The constructed structures and domain surface potential were revealed by piezoresponse force microscopy mode and Kelvin probe force microscopy mode, respectively. The clear surface-potential image could not be obtained in room air condition, but could be achieved by performing measurements after changing temperature in a vacuum. The −Z-faces of patterned domain structures were also subjected to selective chemical etching to construct surface structures with shape originating in these patterns. The surface-structure architectures can be ranged from the sub-micro to nanometer scale and hold promise for application to new functional devices.

Domain and Surface Structuring of LiNbO3 Single Crystal by Scanning Force Microscopy

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-el...

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201470045

Graphene: In Situ and Non-Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All-Solid-State Electric Double-Layer Transistor (Adv. Mater. 7/2014)

Optical Damage Resistance and Refractive Indices in Near-Stoichiometric MgO-Doped LiNbO_3 : Optics and Quantum Electronics

SrTiO3 (STO)-based all-solid-state electric-double-layer transistors (EDLTs) with a Li4SiO4 (LSO) lithium ion conductor (i.e., electrolyte) or Y-stabilized-ZrO2 (YSZ) proton conductor were fabricated. While the LSO device showed significant drain current enhancement at room temperature, the YSZ device needed high temperature to achieve comparable drain current enhancement due to the difference in ionic conductivity between the two electrolytes. Subthreshold swing (S), which is a parameter used to evaluate the steepness of drain current enhancement in field-effect transistors (FETs), was calculated to be 66 and 227 mV/dec, respectively, for LSO and YSZ EDLTs. The 66 mV/dec is very close to the theoretical limit (60 mV/dec) for conventional FETs, indicating that LSO is more suitable for STO-based EDLTs and that the type of solid electrolyte used greatly affects EDLT switching characteristics.

https://iopscience.iop.org/article/10.7567/JJAP.55.06GJ03/pdf

Kazuya Terabe

Papers

Domain and Surface Structuring of LiNbO3 Single Crystal by Scanning Force Microscopy

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

Graphene: In Situ and Non-Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All-Solid-State Electric Double-Layer Transistor (Adv. Mater. 7/2014)

Optical Damage Resistance and Refractive Indices in Near-Stoichiometric MgO-Doped LiNbO_3 : Optics and Quantum Electronics

Comparison of subthreshold swing in SrTiO3-based all-solid-state electric-double-layer transistors with Li4SiO4or Y-stabilized-ZrO2solid electrolyte