T
Tohru Tsuruoka
Researcher at National Institute for Materials Science
Publications - 112
Citations - 6131
Tohru Tsuruoka is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Electrode & Thin film. The author has an hindex of 36, co-authored 106 publications receiving 5173 citations. Previous affiliations of Tohru Tsuruoka include Max Planck Society.
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Journal ArticleDOI
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno,Tsuyoshi Hasegawa,Tohru Tsuruoka,Kazuya Terabe,James K. Gimzewski,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: The discovery of a Ag(2)S inorganic synapse is reported, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time and indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.
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Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers
TL;DR: Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated, which can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems such as beyond von- Neumann computers.
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Learning Abilities Achieved by a Single Solid‐State Atomic Switch
Tsuyoshi Hasegawa,Takeo Ohno,Kazuya Terabe,Tohru Tsuruoka,Tomonobu Nakayama,James K. Gimzewski,Masakazu Aono +6 more
TL;DR: This paper presents a meta-modelling framework for nanoarchitectonics that automates the very labor-intensive and therefore time-heavy and therefore expensive and expensive process of designing materials for nanomaterials engineering.
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Forming and switching mechanisms of a cation-migration-based oxide resistive memory
TL;DR: Detailed current-voltage and current-time measurements are reported to reveal the forming and switching behaviors of Cu/Ta(2)O(5)/Pt nonvolatile resistive memory devices and concluded that the RESET process consists of the Joule-heating-assisted oxidation of Cu atoms at the thinnest part of the metal filament followed by diffusion and drift of the Cu ions under their own concentration gradient and the applied electric field.
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Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Tohru Tsuruoka,Kazuya Terabe,Tsuyoshi Hasegawa,Ilia Valov,Ilia Valov,Rainer Waser,Rainer Waser,Masakazu Aono +7 more
TL;DR: In this paper, the effect of ambient moisture on the operation of oxide-based Gapless-type atomic switches has been investigated and it is shown that residual water has a major impact on the ionization and migration processes and plays a major role in determining the operation voltages.