K
Ken Mai
Researcher at Carnegie Mellon University
Publications - 79
Citations - 6276
Ken Mai is an academic researcher from Carnegie Mellon University. The author has contributed to research in topics: Flash memory & CMOS. The author has an hindex of 30, co-authored 76 publications receiving 5858 citations. Previous affiliations of Ken Mai include Stanford University.
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Book ChapterDOI
A high reliability PUF using hot carrier injection based response reinforcement
Mudit Bhargava,Ken Mai +1 more
TL;DR: This work presents a PUF response reinforcement technique based on hot carrier injection (HCI) which can reinforce the PUF golden response in short stress times, without impacting the surrounding circuits, and that has high permanence (i.e., does not degrade significantly over aging).
Proceedings ArticleDOI
Attack resistant sense amplifier based PUFs (SA-PUF) with deterministic and controllable reliability of PUF responses
TL;DR: A sense amplifier based PUF (SA-PUF) structure that generates random bits with increased reliability, resulting in significantly fewer errors in response bits is proposed, which eliminates the need of complex and costly ECC circuitry in cryptographic applications.
Proceedings ArticleDOI
A secure camouflaged threshold voltage defined logic family
TL;DR: A gate camouflaging technique that relies on the usage of different threshold voltage transistors, but with identical layouts, to determine the logic gate function and is found to be CMOS process compatible, low overhead, and to increase security against various forms of attacks.
Proceedings ArticleDOI
A complexity-effective architecture for accelerating full-system multiprocessor simulations using FPGAs
TL;DR: A first instance of the PROTOFLEX simulation architecture is created, which is an FPGA-based, full-system functional simulator for a 16-way UltraSPARC III symmetric multiprocessor server hosted on a single Xilinx Virtex-II XCV2P70 FPGAs.
Proceedings ArticleDOI
Managing wire scaling: a circuit perspective
Ron Ho,Ken Mai,Mark Horowitz +2 more
TL;DR: In this paper, the authors update prior wire scaling studies with data from the 2001 and 2002 ITRS roadmaps, extending out to the 13 nm node, showing that both local and global wires degrade relative to gates, by one and three orders of magnitude respectively.