K
Kenichi Iga
Researcher at Tokyo Institute of Technology
Publications - 593
Citations - 12004
Kenichi Iga is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 47, co-authored 592 publications receiving 11661 citations. Previous affiliations of Kenichi Iga include University of Santiago de Compostela.
Papers
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Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl2 Inductively Coupled Plasma
TL;DR: In this article, a diagnostic study of the Cl2 inductively coupled plasma (ICP) etching process was carried out by means of spectrochemical analysis using a narrow-field optical fiber probe.
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Strained-Layer Multi-Quantum Barriers for Reducing Hot Electron Leakage in Long-Wavelength Semiconductor Lasers
TL;DR: In this paper, multi-quantum barriers with a 1-tensile-strained AlInAs/GaInAsP system are proposed for the purpose of suppressing the overflow leakage of hot electrons generated by the Auger effect.
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Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
TL;DR: In this paper, the growth characteristics of GaInNAs/GaAs quantum dot (QD) were investigated by chemical beam epitaxy (CBE) and the growth temperature and nitrogen composition dependence on the size and density of GaNAs QDs were investigated.
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Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy
S. Makino,Tomoyuki Miyamoto,Masataka Ohta,Takeo Kageyama,Yoshihiko Ikenaga,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this paper, the growth characteristics of GaInNAs quantum dots by chemical beam epitaxy have been investigated to form uniform and high density dot for high nitrogen (N) composition.
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Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength
TL;DR: In this paper, GaInAsP/InP terraced substrate (TS) was fabricated and stabilized single transverse mode operation has been demonstrated and the wafers were prepared by a single-step LPE growth on (100) n-inP terraces which was terraced along orientation.