K
Kenichi Iga
Researcher at Tokyo Institute of Technology
Publications - 593
Citations - 12004
Kenichi Iga is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 47, co-authored 592 publications receiving 11661 citations. Previous affiliations of Kenichi Iga include University of Santiago de Compostela.
Papers
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Collimation characteristics of stacked planar microlens for parallel optical interconnects
TL;DR: It has been confirmed that the divergence beam from a single mode fiber was collimated by single PML and propagated with good beam quality by about 10 mm, which is the nominal length of microoptics components considered.
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Simple optical wavelength-division multiplexer component that uses the lateral focusing scheme of a planar microlens
TL;DR: A planar microlens beam guide is realized for a wavelength-division multiplexer (WDM) component without precision alignment and a nearly circular focused spot of ~5-µm diameter is obtained, which is comparable with that of a single-mode fibers.
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Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
Masakazu Arai,Nobuhiko Nishiyama,Munechika Azuchi,Akihiro Matsutani,Fumio Koyama,Kenichi Iga +5 more
TL;DR: In this article, the authors demonstrated the monolithic integration of multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on a patterned GaAs (311)B substrate.
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A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
TL;DR: In this article, the liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm depth was realized with good reproduclbility.
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Composition Dependence of Thermal Annealing Effect on 1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy
S. Makino,Tomoyuki Miyamoto,Takeo Kageyama,Yoshihiko Ikenaga,Masakazu Arai,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this paper, the authors investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 13 µm GaInNAs/GaAs QW lasers.