K
Kenichi Iga
Researcher at Tokyo Institute of Technology
Publications - 593
Citations - 12004
Kenichi Iga is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 47, co-authored 592 publications receiving 11661 citations. Previous affiliations of Kenichi Iga include University of Santiago de Compostela.
Papers
More filters
Journal ArticleDOI
High p‐type doping of ZnSe using Li3N diffusion
S. W. Lim,Tohru Honda,Fumio Koyama,Kenichi Iga,K. Inoue,K. Yanashima,Hiroo Munekata,Hiroshi Kukimoto +7 more
TL;DR: In this paper, a highly doped p-type ZnSe layer using a Li3N diffusion technique was achieved, with hole concentration p≳9×1017 cm−3 and hole mobility μp=17 cm2/V
Journal ArticleDOI
Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
TL;DR: In this article, the authors have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD).
Journal ArticleDOI
Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
TL;DR: A GaNAs layer has been grown on a GaAs substrate using chemical beam epitaxy (CBE) with a radio frequency (RF) radical nitrogen source for the first time as mentioned in this paper.
Patent
Semiconductor laser with buffer layer
Shigeyuki Akiba,Yasuharu Suematsu,Shigehisa Arai,Masanobu Kodaira,Yoshio Itaya,Kenichi Iga,Chuichi Ota,Takaya Yamamoto,Kazuo Sakai +8 more
TL;DR: In this article, a semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In 1-x Ga x`As y P 1-y (0.42y≦x≦0.5y,0≦y ≥ 1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 1.0 eV at room temperature is sandwiched between two InP layers on the InP
Journal ArticleDOI
AlGaAs/GaAs multiquantum-well (MQW) surface-emitting laser
TL;DR: In this paper, the lasing characteristics of a multiquantum-well surface-emitting injection laser with 100 wells at 77 K under pulsed condition was reported and the output light of the device was linearly polarised.