J. Appl. Cryst.の発刊に際して

Recent startling interest for lanthanide luminescence is stimulated by the continuously expanding need for luminescent materials meeting the stringent requirements of telecommunication, lighting, electroluminescent devices, (bio-)analytical sensors and bio-imaging set-ups. This critical review describes the latest developments in (i) the sensitization of near-infrared luminescence, (ii) “soft” luminescent materials (liquid crystals, ionic liquids, ionogels), (iii) electroluminescent materials for organic light emitting diodes, with emphasis on white light generation, and (iv) applications in luminescent bio-sensing and bio-imaging based on time-resolved detection and multiphoton excitation (500 references).

/pdf/lanthanide-luminescence-for-functional-materials-and-bio-1w9cppwf8r.pdf

Lanthanide luminescence for functional materials and bio-sciences

Lanthanide-based luminescent hybrid materials.

Upconversion luminescent materials: advances and applications.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

We report the first waveguide laser based on rare-earth sesquioxides. A structured Nd(0.5%):(Gd, Lu)<inf>2</inf>O<inf>3</inf> film pumped at 820 nm showed lasing at 1.08 µm. The laser threshold was 0.8 mW, the preliminary slope efficiency 0.5 % and the maximum output power 1.8 mW.

Low threshold channel waveguide laser in a monocrystalline Nd:(Gd,Lu)2O3 film

Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide channel waveguides. Net gain of up to 2.0 dB/cm was measured, demonstrating this material to provide a competitive active integrated optics technology.

/pdf/2-0-db-cm-gain-in-an-al-2-o-3-er-3-waveguide-on-silicon-3j716nzda4.pdf

2.0 dB/cm gain in an Al 2 O 3 :Er 3+ waveguide on silicon

width of less than or equal to 8 pm operate in a single mode, but the waveguides with a core width of more than 8 pm operate in multiple modes. Figure 3 shows the dependence of optical loss on core width. The optical loss is constant for TE polarized incident light, even though the core width increases. On the other hand, the optical loss decreases with increasing core width for TM polarized incident light. The lowest optical loss at 1.3 pm among the waveguides which operate in a single mode was when the core width was 8 pm; the values were 0.4 dB/cm for TE and 0.7 dB/cm for TM polarized incident lights. In conclusion, we showed that embedded channel waveguides can be fabricated by direct electron beam writing. By controlling conditions appropriately, we can get single mode transmission and low optical loss. *NTT Opto-electronics Laboratories, 9-11, Midori-cho 3-chome Musashino-shi, Tokyo 180 Japan

/pdf/phase-matched-second-harmonic-generation-in-silicon-oxy-35eovzeh16.pdf

Phase matched second harmonic generation in silicon [Oxy]nitride-calix[4]arene waveguides

Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.

/pdf/reactively-co-sputtered-al2o3-er3-for-active-photonic-2qgv6ec6hd.pdf

Reactively co-sputtered Al2O3:Er3+ for active photonic devices

Al2O3 is commonly used as host material for Er3+-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis with the fewest experimental runs. The result forms the base for the further fabrication of Er3+-doped Al2O3 layer. The Graeco-Latin square experiment can also be used to investigate the influence of each parameter on the deposition rate of Al2O3 layer.

/pdf/fabrication-of-low-optical-losses-al2o3-layer-used-for-er3-5cecuxw4uo.pdf

Kerstin Worhoff

Papers

Low threshold channel waveguide laser in a monocrystalline Nd:(Gd,Lu)2O3 film

2.0 dB/cm gain in an Al 2 O 3 :Er 3+ waveguide on silicon

Phase matched second harmonic generation in silicon [Oxy]nitride-calix[4]arene waveguides

Reactively co-sputtered Al2O3:Er3+ for active photonic devices

Fabrication of low optical losses Al2O3 layer used for Er3+-doped integrated optical amplifiers