J. Appl. Cryst.の発刊に際して

Recent startling interest for lanthanide luminescence is stimulated by the continuously expanding need for luminescent materials meeting the stringent requirements of telecommunication, lighting, electroluminescent devices, (bio-)analytical sensors and bio-imaging set-ups. This critical review describes the latest developments in (i) the sensitization of near-infrared luminescence, (ii) “soft” luminescent materials (liquid crystals, ionic liquids, ionogels), (iii) electroluminescent materials for organic light emitting diodes, with emphasis on white light generation, and (iv) applications in luminescent bio-sensing and bio-imaging based on time-resolved detection and multiphoton excitation (500 references).

/pdf/lanthanide-luminescence-for-functional-materials-and-bio-1w9cppwf8r.pdf

Lanthanide luminescence for functional materials and bio-sciences

Lanthanide-based luminescent hybrid materials.

Upconversion luminescent materials: advances and applications.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The influence of energy migration and energy-transfer upconversion (ETU) among neighboring Er3+ ions on luminescence decay and steady-state population densities in Al2O3:Er3+ thin films is investigated by means of photoluminescence decay measurements under quasi-CW excitation. The experimental results are analyzed by several models. As expected from the basic physical assumptions made by these models, only Zubenko’s microscopic model provides good agreement with the experimental data, while other donor−acceptor treatments found in the literature are unsuccessful and the macroscopic rateequation approach provides meaningful results only when misinterpreting the intrinsic lifetime as a free fit parameter. Furthermore, a fast quenching process induced by, e.g., active ion pairs and clusters, undesired impurities, or host material defects such as voids, that is not revealed by any particular signature in the luminescence decay curves because of negligible emission by the quenched ions under quasi-CW excitation, is verified by pump-absorption experiments. This quenching process strongly affects device performance as an amplifier. Since Zubenko’s microscopic model treats all ions equally, it is unable to describe a second, spectroscopically distinct class of ions involving a fast quenching process. The model is extended to take into account the fraction of quenched ions. This approach finally leads to excellent agreement between the luminescence-decay, pump-absorption, and small-signal-gain experiments within the frame of a single theoretical description.

Energy-transfer-upconversion models, their applicability and breakdown in the presence of spectroscopically distinct ion classes: A case study in amorphous Al2O3:Er3+

The nonideal integrated optical N/spl times/N generalized Mach-Zehnder interferometer (GMZI) employing multimode interference (MMI) couplers is analyzed using transfer matrix techniques. Deviations in the phase relations and the power splitting ratio of the MMI couplers are included in the theory, along with the effects of phase errors in the interferometer arms. The predictions of the theory are compared to the response of a 4/spl times/4 GMZI which has been fabricated. The device is operated as both a variable-ratio power splitter and a switch by compensating for the phase errors in the interferometer arms, but the performance is ultimately limited by the nonideal imaging in the MMI couplers. The practicality of these applications is investigated by performing a tolerance analysis for the operation of 1/spl times/N power splitters and switches for N up to 10.

Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching

We report experiments which show evidence that stimulated emission at 863 nm takes place in hybrid monomode Si3N4 waveguides where LaF3 :Nd nanoparticle-doped polymethylmethacrylate (PMMA) was used as a top cladding material. Furthermore, optical gain at 1319 nm in LaF3:Nd nanoparticle dispersed PMMA s0.1 dB/cmd and photodefinable epoxy (Microchem SU-8) multimode waveguides has been observed at pump powers below 10 mW. This class of composite materials based on polymers with dispersed nanoparticles shows promising properties for planar optical amplifiers. Simulation showed that optical gain in the order of 10 dB can be achieved at 100 mW pump power in a 20 cm long monomode waveguide.

Stimulated emission and optical gain in LaF3:Nd nanoparticle-doped polymer-based waveguides

We designed and fabricated an arrayed-waveguide grating (AWG) in silicon oxynitride as a spectrometer for spectral domain optical coherence tomography (SD-OCT). The AWG has a footprint of only 3.0 cm×2.5 cm, operates at a center wavelength of 1300 nm, and has 78 nm free spectral range. OCT measurements are performed that demonstrate imaging up to a maximum depth of 1 mm with an axial resolution of 19 μm, both in agreement with the AWG design parameters. Using the AWG spectrometer combined with a fiber-based SD-OCT system, we demonstrate cross-sectional OCT imaging of a multilayered scattering phantom.

/pdf/spectral-domain-optical-coherence-tomography-imaging-with-an-43linp5pex.pdf

Spectral domain optical coherence tomography imaging with an integrated optics spectrometer

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

/pdf/erbium-doped-spiral-amplifiers-with-20-db-of-net-gain-on-1d3h1h1rp3.pdf

Kerstin Worhoff

Papers

Energy-transfer-upconversion models, their applicability and breakdown in the presence of spectroscopically distinct ion classes: A case study in amorphous Al2O3:Er3+

Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching

Stimulated emission and optical gain in LaF3:Nd nanoparticle-doped polymer-based waveguides

Spectral domain optical coherence tomography imaging with an integrated optics spectrometer

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon