K
Kiyoshi Nakamura
Researcher at Tohoku University
Publications - 114
Citations - 1944
Kiyoshi Nakamura is an academic researcher from Tohoku University. The author has contributed to research in topics: Piezoelectricity & Ultrasonic sensor. The author has an hindex of 23, co-authored 114 publications receiving 1856 citations.
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Ferroelectric domain inversion caused in LiNbO3 plates by heat treatment
TL;DR: In this paper, it was shown that heat treatment of a LiNbO3 plate at temperatures somewhat lower than the Curie point causes a ferroelectric domain inversion, thereby yielding an inversion layer useful for various piezoelectric devices.
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Domain structures in KNbO3 crystals and their piezoelectric properties
TL;DR: In this article, the authors presented the experimental confirmation of the high coupling factor and elucidates the relationship between the domain structure and the piezoelectric properties in the pseudocubic (001)pc cut.
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Photopumped laser oscillation and charge-injected luminescence from organic semiconductor single crystals of a thiophene/phenylene co-oligomer
Musubu Ichikawa,Kiyoshi Nakamura,Masamitsu Inoue,Hiromi Mishima,Takeshi Haritani,Ryota Hibino,Toshiki Koyama,Yoshio Taniguchi +7 more
TL;DR: In this article, single crystals of a thiophene/phenylene co-oligomer [α,ω-bis-biphenyl-4-yl-terthiophene (BP3T)] showed interesting photonic aspects: (1) the self-waveguided amplified spontaneous light emissions with a comparable low threshold of 8μJ∕cm2 to other optimized organic solid-state laser systems, and (2) the laser oscillation based on the optical self-confinement effect in the crystals.
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ZnO/SiO2-diaphragm composite resonator on a silicon wafer
TL;DR: In this article, a thickness-extensional mode piezoelectric resonator consisting of a ZnO/SiO2 diaphragm supported by a silicon wafer was presented.
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Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
Kenji Nomura,Takashi Aoki,Kiyoshi Nakamura,Toshio Kamiya,Takashi Nakanishi,Takayuki Hasegawa,Mutsumi Kimura,Takeo Kawase,Masahiro Hirano,Hideo Hosono +9 more
TL;DR: In this article, a three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In-Ga-Zn-O (a-IGZO) amorphous oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C.