K
Konstantin D. Moiseev
Researcher at Ioffe Institute
Publications - 54
Citations - 326
Konstantin D. Moiseev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Heterojunction & Electroluminescence. The author has an hindex of 9, co-authored 54 publications receiving 301 citations. Previous affiliations of Konstantin D. Moiseev include Russian Academy of Sciences.
Papers
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Journal ArticleDOI
Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
TL;DR: In this article, a study of optical and magnetotransport properties at a type II arsenide-antimonide heterojunction with a broken-gap alignment is presented, which leads to unusual tunnelling assisted radiative recombination transitions and novel transport properties.
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A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
Sergei Ivanov,V. A. Kaygorodov,S. V. Sorokin,B. Ya. Meltser,V. A. Solov’ev,Ya. V. Terent’ev,Olga G. Lyublinskaya,Konstantin D. Moiseev,E. A. Grebenshchikova,Maya P. Mikhailova,A. A. Toropov,Yu. P. Yakovlev,P. S. Kop’ev,Zh. I. Alferov +13 more
TL;DR: In this paper, a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure with a III-V/II-VI heterovalent interface at the 0.6-μm-InAs active region has been fabricated by molecular-beam epitaxy on p+InAs substrate, providing ∼1.5-eV asymmetric barriers for both electrons and holes in InAs, inhibiting carrier leakage from the active region.
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Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
Sergei Ivanov,V. A. Solov’ev,Konstantin D. Moiseev,I. V. Sedova,Ya. V. Terent’ev,A. A. Toropov,B. Ya. Meltzer,Maya P. Mikhailova,Yu. P. Yakovlev,P. S. Kop’ev +9 more
TL;DR: A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs and CdMgSe/CdSe, was proposed as a basic element of a mid-infrared laser structure design in this paper.
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Interface-induced phenomena in type II antimonide-arsenide heterostructures
Maya P. Mikhailova,Konstantin D. Moiseev,Y.A. Berezovets,R. V. Parfeniev,N. L. Bazhenov,V. A. Smirnov,Yu.P. Yakovlev +6 more
TL;DR: In this article, an electron channel with high Hall mobility was observed at the interface of isotype p-GaInAsSb/p-InAs heterojunctions with undoped and slightly doped quaternary layers at low temperatures.
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Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
TL;DR: InSb quantum dots (QDs) and quantum dashes (Q-dashes) were obtained on InAs-rich substrate by both LPE and MOVPE methods as discussed by the authors.