Kornelius Tetzner

TL;DR: In this paper, a Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm2 is demonstrated.

TL;DR: It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy and significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

TL;DR: A review of recent advances in photonic processing paradigms of metal oxide thin film transistors (TFTs), with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or post-deposition treatment of metal oxides and their application in thin-film electronics is presented in this article.

TL;DR: A new laboratory-based instrument capable of delivering monochromated X-rays with an energy of 9.25 keV and a microfocused 30 × 45 μm2 X-ray spot is introduced that allows stable measurements under grazing incidence conditions to maximise signal intensities.

TL;DR: In this article, a photonic curing technique is presented for the annealing of sol-gel derived hafnium oxide (HfO 2 ) dielectrics within a few seconds.