K
Krishanu Chatterjee
Researcher at Techno India University
Publications - 16
Citations - 502
Krishanu Chatterjee is an academic researcher from Techno India University. The author has contributed to research in topics: Seebeck coefficient & Polyaniline. The author has an hindex of 9, co-authored 15 publications receiving 397 citations. Previous affiliations of Krishanu Chatterjee include Indian Institute of Engineering Science and Technology, Shibpur.
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Reduced graphene oxide-polyaniline composites—synthesis, characterization and optimization for thermoelectric applications
Mousumi Mitra,Chiranjit Kulsi,Krishanu Chatterjee,Kajari Kargupta,Saibal Ganguly,Dipali Banerjee,Shyamaprosad Goswami +6 more
TL;DR: In this paper, reduced graphene oxide (rGO) can improve the thermoelectric properties of polyaniline (PANI) by varying its concentration in composites of rGO nanosheets and PANI, leading to a more ordered structure with high crystallinity during polymerization.
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Synthesis, characterization and enhanced thermoelectric performance of structurally ordered cable-like novel polyaniline-bismuth telluride nanocomposite.
TL;DR: X-ray powder diffraction, UV-vis and Raman spectral analysis confirm the highly ordered chain structure of PANI on Bi₂Te₃ nanorods, leading to a higher extent of doping, higher chain mobility and enhancement of the thermoelectric performance.
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Synthesis and characterization of an electro-deposited polyaniline-bismuth telluride nanocomposite - A novel thermoelectric material
TL;DR: In this paper, a novel thermoelectric material polyaniline (PANI)-bismuth telluride (Bi{sub 2}Te{sub 3}) nanocomposite using simultaneous electrochemical reactions and deposition method is presented.
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Reduction of graphene oxide through a green and metal-free approach using formic acid
TL;DR: In this article, the authors reported on the production of reduced graphene oxide (GO) by the chemical reduction of GO using formic acid, which is simple, environmentally friendly, low cost and metal free.
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Bismuth nitrate doped polyaniline – Characterization and properties for thermoelectric application
TL;DR: In this article, the effect of dopant concentration on the electrical transport properties in the temperature range 300-400 K was discussed and the variation suggests metallic type conduction with a hopping/tunneling mechanism of transport with charge carriers.