K
Krishna C. Mandal
Researcher at University of South Carolina
Publications - 206
Citations - 2886
Krishna C. Mandal is an academic researcher from University of South Carolina. The author has contributed to research in topics: Particle detector & Schottky barrier. The author has an hindex of 28, co-authored 189 publications receiving 2375 citations. Previous affiliations of Krishna C. Mandal include Lawrence Livermore National Laboratory & Jadavpur University.
Papers
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Studies on new chemically deposited photoconducting antimony trisulphide thin films
TL;DR: In this paper, a new room temperature chemical deposition technique has been developed to deposit semiconducting antimony trisulphide thin films on conducting and ordinary glass substrates, which is based on aqueous ammonia bath containing potassium antimonyl tartarate (PAT), triethanolamine (TEA), and thioacetamide (TAM).
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High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
TL;DR: In this article, the fabrication and characterization of large area, room-temperature operable and very high resolution Schottky barrier detectors for alpha particles using 20μm thick n-type 4H-SiC epitaxial layers was reported.
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Optical properties of Nd 3+ - and Tb 3+ -doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay
Katja Rademaker,William F. Krupke,Ralph H. Page,Stephen A. Payne,Klaus Petermann,Guenter Huber,Alexander P. Yelisseyev,Ludmila I. Isaenko,Utpal N. Roy,Arnold Burger,Krishna C. Mandal,Karel Nitsch +11 more
TL;DR: In this paper, the optical properties of Nd3+-and Tb3+doped low-phonon energy moisture-resistant host crystals, such as RE3+:MPb2Br5 (M=Rb, K), were investigated.
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Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid
O. Savadogo,Krishna C. Mandal +1 more
TL;DR: In this article, a method for fabricating high efficiency metal (Pt, Au, and Ni)/(CdSe or Sb[sub 2]S[sub 3]) Schottky barrier solar cells is reported.
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Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
TL;DR: In this article, the electron-hole pair creation energy (e) has been determined from alpha spectroscopy using 4H-SiC epitaxial layer Schottky detectors and a pulser calibration technique.