Most of the signal processing that we will study in this course involves local operations on a signal, namely transforming the signal by applying linear combinations of values in the neighborhood of each sample point. You are familiar with such operations from Calculus, namely, taking derivatives and you are also familiar with this from optics namely blurring a signal. We will be looking at sampled signals only. Let's start with a few basic examples. Local difference Suppose we have a 1D image and we take the local difference of intensities, DI(x) = 1 2 (I(x + 1) − I(x − 1)) which give a discrete approximation to a partial derivative. (We compute this for each x in the image.) What is the effect of such a transformation? One key idea is that such a derivative would be useful for marking positions where the intensity changes. Such a change is called an edge. It is important to detect edges in images because they often mark locations at which object properties change. These can include changes in illumination along a surface due to a shadow boundary, or a material (pigment) change, or a change in depth as when one object ends and another begins. The computational problem of finding intensity edges in images is called edge detection. We could look for positions at which DI(x) has a large negative or positive value. Large positive values indicate an edge that goes from low to high intensity, and large negative values indicate an edge that goes from high to low intensity. Example Suppose the image consists of a single (slightly sloped) edge:

http://ieeexplore.ieee.org/iel5/5/31307/01456462.pdf

Linear systems

Digital Control Of Dynamic Systems This well-respected, market-leading text discusses the use of digital computers in the real-time control of dynamic systems. The emphasis is on the design of digital controls that achieve good dynamic response and small errors while using signals that are sampled in time and quantized in amplitude. Digital Control of Dynamic Systems (3rd Edition): Franklin ... This well-respected, market-leading text discusses the use of digital computers in the real-time control of dynamic systems. The emphasis is on the design of digital controls that achieve good dynamic response and small errors while using signals that are sampled in time and quantized in amplitude. Digital Control of Dynamic Systems: Gene F. Franklin ... Digital Control of Dynamic Systems, 2nd Edition. Gene F. Franklin, Stanford University. J. David Powell, Stanford University Digital Control of Dynamic Systems, 2nd Edition Pearson This well-respected work discusses the use of digital computers in the real-time control of dynamic systems. The emphasis is on the design of digital controls that achieve good dynamic response and small errors while using signals that are sampled in time and quantized in amplitude. MATLAB statements and problems are thoroughly and carefully integrated throughout the book to offer readers a complete design picture. Digital Control of Dynamic Systems, 3rd Edition ... Digital control of dynamic systems | Gene F. Franklin, J. David Powell, Michael L. Workman | download | B–OK. Download books for free. Find books Digital control of dynamic systems | Gene F. Franklin, J ... Abstract This well-respected work discusses the use of digital computers in the real-time control of dynamic systems. The emphasis is on the design of digital controls that achieve good dynamic... (PDF) Digital Control of Dynamic Systems Digital Control of Dynamic Systems, Addison.pdf There is document Digital Control of Dynamic Systems, Addison.pdfavailable here for reading and downloading. Use the download button below or simple online reader. The file extension PDFand ranks to the Documentscategory. Digital Control of Dynamic Systems, Addison.pdf Download ... Automatic control is the science that develops techniques to steer, guide, control dynamic systems. These systems are built by humans and must perform a specific task. Examples of such dynamic systems are found in biology, physics, robotics, finance, etc. Digital Control means that the control laws are implemented in a digital device, such as a microcontroller or a microprocessor. Introduction to Digital Control of Dynamic Systems And ... The discussions are clear, nomenclature is not hard to follow and there are plenty of worked examples. The book covers discretization effects and design by emulation (i.e. design of continuous-time control system followed by discretization before implementation) which are not to be found on every book on digital control. Amazon.com: Customer reviews: Digital Control of Dynamic ... Find helpful customer reviews and review ratings for Digital Control of Dynamic Systems (3rd Edition) at Amazon.com. Read honest and unbiased product reviews from our users. Amazon.com: Customer reviews: Digital Control of Dynamic ... 1.1.2 Digital control Digital control systems employ a computer as a fundamental component in the controller. The computer typically receives a measurement of the controlled variable, also often receives the reference input, and produces its output using an algorithm. Introduction to Applied Digital Control From the Back Cover This well-respected, marketleading text discusses the use of digital computers in the real-time control of dynamic systems. The emphasis is on the design of digital controls that achieve good dynamic response and small errors while using signals that are sampled in time and quantized in amplitude. Digital Control of Dynamic Systems (3rd Edition) Test Bank `Among the advantages of digital logic for control are the increased flexibility `of the control programs and the decision-making or logic capability of digital `systems, which can be combined with the dynamic control function to meet `other system requirements. `The digital controls studied in this book are for closed-loop (feedback) Every day, eBookDaily adds three new free Kindle books to several different genres, such as Nonfiction, Business & Investing, Mystery & Thriller, Romance, Teens & Young Adult, Children's Books, and others.

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Digital control of dynamic systems

The recent combination of scanning electron microscopy and digital image correlation (SEM-DIC) enables the experimental investigation of full-field deformations at much smaller length scales than is possible using optical digital image correlation methods. However, the high spatial resolution of SEM-DIC comes at the cost of complex image distortions, long image scan times that can capture gradients from stress relaxation, and a high noise sensitivity to SEM parameters. In this paper, it is shown that these sources of error can significantly impact the quality of the results and must be accounted for in order to perform accurate SEM-DIC experiments. An existing framework for distortion corrections is adapted to improve accuracy and the procedures are described in detail. As the results demonstrate, time varying drift distortion is a larger problem at high magnification while spatial distortion is more problematic at low magnification. Additionally, the new use of sample-independent calibration and a method to eliminate the detrimental effects of stress relaxation in the displacement fields prior to distortion correction are introduced. The impact of SEM settings on image noise is quantified and noise minimization schemes are examined. Finally, a uniaxial tension test on coarse-grained 1100-O aluminum is used to demonstrate these techniques, where active slip planes are identified and strain localization is examined in relation to the underlying microstructure.

Digital Image Correlation under Scanning Electron Microscopy: Methodology and Validation

Continued demands on shrinking features with tighter tolerance on Critical Dimensions (CDs) and overlays are placing stringent requirements on parameters that are essentially the building blocks of the metrologies for CDs and overlays. This paper conducts a reality check on the precision and error budgets assigned to CD and overlay controls by the National Technology Roadmap for Semiconductors in light of constraints on parameters that are fundamental to the above measurements.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Analyzing the tolerance and controls on Critical Dimensions and overlays as prescribed by the National Technology Roadmap for semiconductors

A method of generating a bias-adjusted layout design of a conductive feature includes receiving a layout design of the conductive feature. If a geometry configuration of the layout design is within a first set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a first layout bias rule. If the geometry configuration of the layout design is within a second set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a second layout bias rule.

Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process

Most microlithographic steppers use a dual stage design to achieve both large stroke and high precision motion. The fine-stage of the stepper compensates for the insufficient resolution of the coarse stage. In this design, the stepper fine-stage adjusts the semiconductor wafer position and orientation to a close to 10-nm positioning accuracy with a 10-micron motion stroke. The stage uses three sets of piezoelectric actuators to adjust the X, Y positioning and /spl theta/ orientation. The servo controller positions and orients the stage to meet the specification. A multivariable system identification process indicates that there is a serious coupling among the system dynamics in different degrees of freedom. In addition, the actuators possess a non-linear hysteresis effect. A diagonal controller, based upon the linear-quadratic Gaussian algorithm, is designed to overcome the actuators' hysteresis effect, and decouple the plant at steady state. The experimental results show that the resultant control achieves a satisfactory performance.

Servo system design of a high-resolution piezo-driven fine stage for step-and-repeat microlithography systems

Extreme ultraviolet (EUV) lithography is a promising candidate for high-volume manufacturing at the 22-nm half-pitch node and beyond. EUV projection lithography systems need to rely on reflective optical elements and masks with oblique illumination for image formation. It leads to undesired effects such as pattern shift and horizontal-to-vertical critical dimension bias, which are generally reported as shadowing. Rule-based approaches proposed to compensate for shadowing include changing mask topography, introducing mask defocus, and biasing patterns differently at different slit positions. However, the electromagnetic interaction between the incident light and the mask topography with complicated geometric patterns, such as optical diffraction, not only causes shadowing but also induces proximity effects. This phenomenon cannot be easily taken into account by rule-based corrections and thus imposes a challenge on a partially model-based correction flow, the so-called combination of rule- and model-based corrections. A fully model-based correction flow, which integrates an in-house optical proximity correction algorithm with rigorous three-dimensional mask simulation, is proposed to simultaneously compensate for shadowing and proximity effects. Simulation results for practical circuit layouts indicate that the fully model-based correction flow significantly outperforms the partially model-based one in terms of correction accuracy, while the total run time is slightly increased.

Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

The present disclosure involves a method. The method includes decomposing a layout of a circuit into a plurality of patterns. The method includes generating a plurality of contours to represent the plurality of patterns after the patterns have been subjected to a manufacturing process. The method includes generating a plurality of polygons that approximate geometries of the contours, respectively. The method includes associating each of the polygons with a respective one of a plurality of pattern elements in a pattern library, wherein the pattern elements each include a shape that resembles the associated polygon and electrical parameters extracted from the shape. The method includes calculating electrical performance of the circuit based on the pattern elements associated with the polygons.

Method for improving accuracy of parasitics extraction considering sub-wavelength lithography effects

Model-based Optical Proximity Correction (MBOPC) has become one of the most important resolution enhancement
technologies (RETs), which can effectively improve the image fidelity and process robustness. MBOPC is performed by
iteratively shifting the polygon edges of mask patterns until convergence requirements are achieved. In this paper, we
specifically discuss the design of feedback controllers to improve MBOPC convergence. Effective controller design rules
are derived from the OPC results of several circuit layouts. Meanwhile, resist models also significantly affect MBOPC
convergence. Two kinds of resist model have been proposed for MBOPC such as constant threshold resist model (CTRM)
and variable threshold resist model (VTRM). We propose a novel CTRM, called pattern-based optimal threshold
determination (PBOTD). By normalized mean square error (NMSE) formulation, appropriate threshold values with
minimum NMSE can be determined to improve image fidelity, and effectively decrease iterations required. The
effectiveness of applying both optimized controller and PBOTD is demonstrated on a 90-nm SRAM cell.

Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence

Helium (He) ion lithography is being considered as one of the most promising and emerging technology for the manufacturing of next generation integrated circuits (ICs) at nanolevel. However, He-ion active resists are rarely reported. In this context, we are introducing a new non-chemically amplified hybrid resist (n-CAR), MAPDSA-MAPDST, for high resolution He-ion beam lithography (HBL) applications. In the resist architecture, 2.15 % antimony is incorporated as heavy metal in the form of antimonate. This newly developed resists has successfully used for patterning 20 nm negative tone features at a dose of 60 μC/cm2. The resist offered very low line edge roughness (1.27±0.31 nm) for 20 nm line features. To our knowledge, this is the first He-ion active hybrid resist for nanopatterning. The contrast (γ) and sensitivity (E0) of this resist were calculated from the contrast curve as 0.73 and 7.2 μC/cm2, respectively.

/pdf/heavy-metal-incorporated-helium-ion-active-hybrid-non-5875rsydgn.pdf

Kuen-Yu Tsai

Papers

Servo system design of a high-resolution piezo-driven fine stage for step-and-repeat microlithography systems

Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Method for improving accuracy of parasitics extraction considering sub-wavelength lithography effects

Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence

Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness