L
L. N. Pfeiffer
Researcher at Alcatel-Lucent
Publications - 485
Citations - 12683
L. N. Pfeiffer is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Quantum Hall effect & Quantum well. The author has an hindex of 55, co-authored 450 publications receiving 12016 citations.
Papers
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Highly-Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally-Coupled Half-Filled Landau Level
Cheng-Zhen Wang,A. Gupta,Yoon Jang Chung,L. N. Pfeiffer,Kenneth D. West,Kirk W. Baldwin,R Winkler,Mansour Shayegan +7 more
TL;DR: The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing as discussed by the authors .
Book ChapterDOI
The interaction between exciton states near the quantum well bandgap and confined photons in GaAs/AlAs microcavities
Journal ArticleDOI
Polariton–Electron Scattering in a Semiconductor Microcavity
TL;DR: In this paper, the effect of a classical electron gas on the cavity polariton linewidths is studied experimentally at T = 80 K in a GaAs/AlAs microcavity with an embedded quantum well.
Book ChapterDOI
Evolution of the 2Deg-Free Hole to Charged Exciton Photoluminescence in GaAs/AlGaAs Quantum Wells
TL;DR: In this paper, a detailed study of magneto-photoluminescence in high quality GaAs/AlGaAs quantum wells containing a two-dimensional electron gas was performed. But the results were limited to the case where the 2DEG density was varied by optical depletion in the range of n 2D = (0.01−2) × 1011 cm-2 with He-Ne laser illumination.
Journal ArticleDOI
Anomalous electronic transport in high-mobility Corbino rings
Sujatha Vijayakrishnan,Frédéric Poitevin,Ou Yu,Z. Berkson-Korenberg,Matei Petrescu,Monica P. Lilly,Thomas Szkopek,Kartiek Agarwal,Kenneth D. West,L. N. Pfeiffer,Guillaume Gervais +10 more
TL;DR: In this paper , low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ( ≳ 20 × 106 cm2/Vs) and with distinct electron density of 1.7 and 3.6 × 1011 cm-2.