L
L. N. Pfeiffer
Researcher at Alcatel-Lucent
Publications - 485
Citations - 12683
L. N. Pfeiffer is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Quantum Hall effect & Quantum well. The author has an hindex of 55, co-authored 450 publications receiving 12016 citations.
Papers
More filters
Journal ArticleDOI
Optical probing of electronic fractional quantum Hall states
J.H. Blokland,Peter C. M. Christianen,B. M. Ashkinadze,V. V. Rudenkov,L. N. Pfeiffer,J.C. Maan +5 more
TL;DR: J. C. Maan et al. as discussed by the authors proposed a high-field magnet lab at Radboud University Nijmegen in the Netherlands, where they used the high field magnet lab to conduct experiments on high-level magnet experiments.
Journal ArticleDOI
Experiments on the Fermi to Tomonaga–Luttinger Liquid Transition in Quasi-1D Systems
TL;DR: In this paper, the authors present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with GaAs/AlGaAs cleaved edge overgrown structures.
Journal ArticleDOI
Low temperature electronic transports in the presence of a density gradient
Wei Pan,Jian-Sheng Xia,Horst Stormer,Horst Stormer,D. C. Tsui,C. L. Vicente,E. D. Adams,Neil Sullivan,L. N. Pfeiffer,Kirk W. Baldwin,Ken W. West +10 more
TL;DR: In this paper, the authors discuss the quantization of the diagonal resistivity at the edges of several quantum Hall states and find that the quantized R x x value turns out to be close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R x y.
Proceedings ArticleDOI
Dark region of quantum well excitons in stress-induced potentials
TL;DR: In this paper, the ground state of spatially indirect excitons is shown to be optically inactive and its relevance to Bose-Einstein condensation has been overlooked.
Journal ArticleDOI
Charging efficiency and lifetime of image-bound electrons on a dielectric surface
Maurizio Biasini,R. D. Gann,Jory A. Yarmoff,Allen P. Mills,L. N. Pfeiffer,Ken W. West,Xuan P. A. Gao,B. C. D. Williams +7 more
TL;DR: In this article, the surface charge generated on an Al0.24Ga0.76As∕GaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel.