L. N. Pfeiffer

TL;DR: In this paper, the authors have fabricated undoped p-channel GaAs∕AlxGa1−xAs heterostructure field effect transistors with nearly ideal drain currentvoltage characteristics, using atomic-layer-deposited Al2O3 as the dielectric, and measured their transport properties.

TL;DR: The resonance frequency, a measure of the pinning interaction between the 2D electron systems and disorder, increases with B(ip), and the magnitude of this increase indicates that disorder interaction is playing an important role in determining the stripe orientation.

TL;DR: In this paper, an aluminum single-electron transistor (SET) was incorporated on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot.

TL;DR: In this article, the surface morphology near dislocations of AlGaN/GaN heterostructures grown by molecular beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy (HVPE) was examined.

TL;DR: Measurements of low-lying spin excitations by inelastic light scattering unveil a delicate balance between spin reversal and Fermi energies in the Fermani sea of composite fermions that emerges in the limit of nu --> 1/2.