The major increase in discharge duration and plasma energy in a next step DT fusion reactor will give rise to important plasma-material effects that will critically influence its operation, safety and performance. Erosion will increase to a scale of several centimetres from being barely measurable at a micron scale in today's tokamaks. Tritium co-deposited with carbon will strongly affect the operation of machines with carbon plasma facing components. Controlling plasma-wall interactions is critical to achieving high performance in present day tokamaks, and this is likely to continue to be the case in the approach to practical fusion reactors. Recognition of the important consequences of these phenomena stimulated an internationally co-ordinated effort in the field of plasma-surface interactions supporting the Engineering Design Activities of the International Thermonuclear Experimental Reactor project (ITER), and significant progress has been made in better understanding these issues. The paper reviews the underlying physical processes and the existing experimental database of plasma-material interactions both in tokamaks and laboratory simulation facilities for conditions of direct relevance to next step fusion reactors. Two main topical groups of interaction are considered: (i) erosion/redeposition from plasma sputtering and disruptions, including dust and flake generation and (ii) tritium retention and removal. The use of modelling tools to interpret the experimental results and make projections for conditions expected in future devices is explained. Outstanding technical issues and specific recommendations on potential R&D avenues for their resolution are presented.

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Plasma{material interactions in current tokamaks and their implications for next step fusion reactors

This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p–i–n-type solar cells, as fabricated so far, are compared in their key parameters (Jsc, FF, Voc) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the μc-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies. Copyright © 2004 John Wiley & Sons, Ltd.

Thin‐film silicon solar cell technology

Perovskite materials use earth-abundant elements, have low formation energies for deposition and are compatible with roll-to-roll and other high-volume manufacturing techniques. These features make perovskite solar cells (PSCs) suitable for terawatt-scale energy production with low production costs and low capital expenditure. Demonstrations of performance comparable to that of other thin-film photovoltaics (PVs) and improvements in laboratory-scale cell stability have recently made scale up of this PV technology an intense area of research focus. Here, we review recent progress and challenges in scaling up PSCs and related efforts to enable the terawatt-scale manufacturing and deployment of this PV technology. We discuss common device and module architectures, scalable deposition methods and progress in the scalable deposition of perovskite and charge-transport layers. We also provide an overview of device and module stability, module-level characterization techniques and techno-economic analyses of perovskite PV modules. Perovskite solar cells (PSCs) have emerged as a revolutionary class of photovoltaic technology. Here, we review recent progress and challenges in scaling up PSCs towards commercialization. We discuss several areas, including device architectures, deposition methods, scalable deposition of perovskite and charge transport layers, device stability, module-level characterization and techno-economic analyses.

Scalable fabrication of perovskite solar cells

Low-temperature plasma physics and technology are diverse and interdisciplinary fields. The plasma parameters can span many orders of magnitude and applications are found in quite different areas of daily life and industrial production. As a consequence, the trends in research, science and technology are difficult to follow and it is not easy to identify the major challenges of the field and their many sub-fields. Even for experts the road to the future is sometimes lost in the mist. Journal of Physics D: Applied Physics is addressing this need for clarity and thus providing guidance to the field by this special Review article, The 2012 Plasma Roadmap.

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The 2012 Plasma Roadmap

Novel photovoltaic technologies such as perovskites hold the promise of a reduced levelized cost of electricity, but the low-cost potential depends on the ability to scale-up solution-based deposition. So far, complex fluid dynamics have limited the solution deposition of uniform pinhole-free organic–inorganic perovskite thin films over large areas. Here, we show that very small amounts (tens of parts per million) of surfactants (for example, l-α-Phosphatidylcholine) dramatically alter the fluid drying dynamics and increase the adhesion of the perovskite ink to the underlying non-wetting charge transport layer. The additives enable blading of smooth perovskite films at a coating rate of 180 m h–1 with root-mean-square roughness of 14.5 nm over 1 cm. The surfactants also passivate charge traps, resulting in efficiencies over 20% for small-area solar cells. Fast blading in air of perovskite films results in stabilized module efficiencies of 15.3% and 14.6% measured at aperture areas of 33.0 cm2 and 57.2 cm2, respectively. Scaling up perovskite film deposition necessitates controlling the film formation dynamics. Here, Deng et al. use amphoteric choline surfactants to blade-coat well-passivated films, reaching module efficiencies of ~15% for aperture areas up to 57 cm2.

Surfactant-controlled ink drying enables high-speed deposition of perovskite films for efficient photovoltaic modules

The time‐resolved fluxes of negative polysilicon hydride ions from a power‐modulated rf silane plasma have been measured by quadrupole mass spectrometry and modeled using a simple polymerization scheme. Experiments were performed with plasma parameters suitable for high‐quality amorphous silicon deposition. Polysilicon hydride anions diffuse from the plasma with low energy (approximately 0.5 eV) during the afterglow after the electron density has decayed and the sheath fields have collapsed. The mass dependence of the temporal behavior of the anion loss flux demonstrates that the plasma composition is influenced by the modulation frequency. The negative species attain much higher masses than the positive or neutral species and anions containing as many as sixteen silicon atoms have been observed, corresponding to the 500 amu limit of the mass spectrometer. This suggests that negative ions could be the precursors to particle formation. Ion–molecule and ion–ion reactions are discussed and a simple negative ion polymerization scheme is proposed which qualitatively reproduces the experimental results. The model shows that the densities of high mass negative ions in the plasma are strongly reduced by modulation frequencies near 1 kHz. Each plasma period is then too short for the polymerization chain to propagate to high masses before the elementary anions are lost in each subsequent afterglow period. This explains why modulation of the rf power can reduce particle contamination. We conclude that for the case of silane rf plasmas, the initiation steps which ultimately lead to particle contamination proceed by negative ion polymerization.

Time-resolved measurements of highly polymerized negative ions in radio frequency silane plasma deposition experiments

Experiments using a lens-shaped circular electrode are described to measure the correction of plasma nonuniformity due to the standing wave effect in a large area very high frequency plasma reactor. This work is the experimental verification of the theoretical reactor design in cylindrical geometry recently presented by L. Sansonnens and J. Schmitt, Appl. Phys. Lett. 82, 182 (2003). It is found that the lens-shaped electrode effectively compensates the standing wave effects by creating a uniform rf vertical electric field in the plasma volume. The plasma is uniform, except for edge effects, for a wide range of parameters and consequently the design is suitable for plasma processing.

Improving plasma uniformity using lens-shaped electrodes in a large area very high frequency reactor

In this work, the microstructure transition from amorphous to microcrystalline silicon is defined in terms of the silane concentration in the plasma as opposed to the silane concentration in the input gas flow. In situ Fourier transform infrared absorption spectroscopy combined with ex situ Raman spectroscopy has been used to calibrate and validate this approach. Results show that a relevant parameter to obtain mu c-Si : H from SiH4/H-2 mixtures is the plasma composition, which is determined not only by the gas dilution ratio but also by the silane depletion fraction. It is also shown that mu c-Si : H can only be deposited efficiently, in terms of gas utilization, at a high rate by using high input concentration and depletion of silane.

https://iopscience.iop.org/article/10.1088/0963-0252/16/1/011/pdf

Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges

Non-uniform voltage distribution across the electrode area results in inhomogeneous thin-film RF plasma deposition in large-area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode area is presented. The results of this model are in good agreement with measurements performed without plasma at 13.56 MHz and 70 MHz in a large-area reactor. The principal voltage inhomogeneities are caused by logarithmic singularities in the vicinity of RF connections and not by standing waves. These singularities are only described by a two-dimensional model and cannot be intuitively predicted by analogy to a one-dimensional case. Plasma light emission measurements and thickness homogeneity studies of a-Si:H deposited films show that the plasma reproduces these voltage inhomogeneities. Improvement of the voltage uniformity is investigated by changing the number and position of the RF connections.

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A voltage uniformity study in large-area reactors for RF plasma deposition

Diagnostics of particle genesis and growth in RF silane plasmas by ion mass spectrometry and light scattering

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L. Sansonnens

Papers

Time-resolved measurements of highly polymerized negative ions in radio frequency silane plasma deposition experiments

Improving plasma uniformity using lens-shaped electrodes in a large area very high frequency reactor

Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges

A voltage uniformity study in large-area reactors for RF plasma deposition

Diagnostics of particle genesis and growth in RF silane plasmas by ion mass spectrometry and light scattering