L
Lakhdar Dehimi
Researcher at University of Batna
Publications - 79
Citations - 761
Lakhdar Dehimi is an academic researcher from University of Batna. The author has contributed to research in topics: Diode & Schottky barrier. The author has an hindex of 15, co-authored 75 publications receiving 582 citations. Previous affiliations of Lakhdar Dehimi include University of Biskra.
Papers
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Temperature and SiO 2 /4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
TL;DR: In this article, the authors investigated the effect of temperature and carrier-trapping on the electrical characteristics of a 4H silicon carbide (4H-SiC) metal-oxide-semiconductor field effect transistor (MOSFET) dimensioned for low breakdown voltage (BVDS).
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Theoretical design and performance of InxGa1-xN single junction solar cell
TL;DR: In this paper, the insertion of optimized Window and a back surface field (BSF) layers on an InxGa1-xN p-n basic single junction (BSJ) solar cell is the chief reason behind the reduction of front and back recombination.
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Multiobjective Optimization of Design of 4H-SiC Power MOSFETs for Specific Applications
TL;DR: In this paper, a dual-implanted MOSFET was used as a low-power transistor in direct current (DC)-DC converters for solar power optimizers.
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Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes
Kamal Zeghdar,Lakhdar Dehimi,Lakhdar Dehimi,Fortunato Pezzimenti,Sandro Rao,Francesco G. Della Corte +5 more
TL;DR: In this paper, the currentvoltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85-445 K temperature range by means of a combined numerical and analytical simulation study.
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Analysis of the Forward I – V Characteristics of Al-Implanted 4H-SiC p -i- n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
TL;DR: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current-voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based device simulator.