Lars Middelstaedt

TL;DR: In this article, the authors analytically determine four key measurable indicators, which help to find optimal gate signal shaping settings for an active gate driver, including device voltage gradient, as well as the gradient and overshoot level at specific points in the transient current.

TL;DR: In this article, the switching characteristics of semiconductors are investigated as a main source of radiated electromagnetic interference (EMI), especially, characteristic oscillations after the switching process influence the EMI characteristic of the circuit under investigation in the high frequency range.

TL;DR: In this paper, a detailed evaluation of the influence of parasitic elements, e.g., semiconductor inductances and heat sink capacitances, on radio frequency noise of a power electronic circuit is presented, using measurements in time domain.

TL;DR: The proposed paper unveils various sources of conducted and radiated electromagnetic interferences (EMIs) of an interleaved dc–dc converter with gallium nitride (GaN) transistors and describes different optimization strategies, generalizing critical aspects that need to be kept in mind during the design stage.

TL;DR: This paper investigates the triggering of EMI-critical oscillations in power electronic circuits with fast switching semiconductors using a boost converter circuit and presents an optimization strategy to reduce the oscillation amplitude.