L
Lei Wu
Researcher at Southwest Jiaotong University
Publications - 18
Citations - 95
Lei Wu is an academic researcher from Southwest Jiaotong University. The author has contributed to research in topics: Etching (microfabrication) & Silicon. The author has an hindex of 4, co-authored 16 publications receiving 42 citations.
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Journal ArticleDOI
Rapid identification of ultrathin amorphous damage on monocrystalline silicon surface
Lei Wu,Bingjun Yu,Pei Zhang,Chengqiang Feng,Peng Chen,Liang Deng,Jian Gao,Siming Chen,Shulan Jiang,Linmao Qian +9 more
TL;DR: In this study, ultrathin a-Si was found to act as a mask against etching in HF/HNO3 mixtures, resulting in the formation of protrusive hillocks, and the proposed selective etching can be rapidly identified with high resolution and low destruction.
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A Review on Fabrication of Blazed Gratings
TL;DR: In this paper, the physical principles of blazed gratings, specific approaches and the achievements of typical processing methods, including mechanical ruling, holographic ion beam etching, electron beam lithography, wet etching etc.
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Oxidation-induced changes of mechanochemical reactions at GaAs–SiO2 interface: The competitive roles of water adsorption, mechanical property, and oxidized structure
TL;DR: In this article, the atomic structures, chemical, and mechanical properties of as-received, hydrochloric acid-etched, and ultraviolet-irradiated GaAs surfaces were characterized, and their roles in atomic attrition dominated by mechanochemical reactions were revealed at atomic scale.
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Scanning probe-based nanolithography: nondestructive structures fabricated on silicon surface via distinctive anisotropic etching in HF/HNO3 mixtures
TL;DR: In this article, an atomic force microscope diamond tip was used for the preparation of friction-induced hillocks, mainly consisting of amorphous Si, through reciprocating sliding of Si surfaces below critical contact pressure.
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Effects of crystal planes on topography evolution of silicon surface during nanoscratch-induced selective etching
TL;DR: In this paper, the effects of Si crystal planes on surface topography evolution during nanoscratch-induced selective etching in the commonly used etchants, i.e., KOH, tetra-methyl-ammonium hydroxide (TMAH), and a mixture of hydrofluoric acid (HF) and nitric acid (HNO3), were investigated using a single-asperity diamond tip.