An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

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Ferroelectric thin films: Review of materials, properties, and applications

The broad spectrum of electronic and optical properties exhibited by oxides offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired Here we describe the use of reactive molecular-beam epitaxy and pulsed-laser deposition to synthesize functional oxides, including ferroelectrics, ferromagnets, and materials that are both at the same time Owing to the dependence of properties on direction, it is often optimal to grow functional oxides in particular directions to maximize their properties for a specific application But these thin film techniques offer more than orientation control; customization of the film structure down to the atomic-layer level is possible Numerous examples of the controlled epitaxial growth of oxides with perovskite and perovskite-related structures, including superlattices and metastable phases, are shown In addition to integrating functional oxides with conventional semiconductors, standard semiconductor practices involving epitaxial strain, confined thickness, and modulation doping can also be applied to oxide thin films Results of fundamental scientific importance as well as results revealing the tremendous potential of utilizing functional oxide thin films to create devices with enhanced performance are described

/pdf/a-thin-film-approach-to-engineering-functionality-into-51t9902h5j.pdf

A Thin Film Approach to Engineering Functionality into Oxides

Piezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/AC28E0B7FC52ADDE14E1F58F59416494/S0883769400003614a.pdf/div-class-title-piezoelectric-thin-films-for-sensors-actuators-and-energy-harvesting-div.pdf

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

Capacitor technologies are as varied as the applications that they enable, but one of the common themes in advanced capacitors for consumer electronics is a desire for increased capacitance in smaller areas/volumes. The heroic advances of discrete capacitor manufacturers have kept pace with the increasing demands of miniaturization, but a time is quickly approaching when it appears that powder-based fabrication techniques simply will not be able to achieve desired layer thicknesses and capacitance densities. Here, we review the current state of the art and recent advances in the processing science and technology of high-permittivity thin films with a focus on industrially scalable solution-based fabrication processes of perovskite ferroelectric systems that appear to offer the greatest promise for the fabrication of future nanoscale capacitors.

Processing Technologies for High Permittivity Thin Films in Capacitor Applications.

Projected trends for capacitors include increasing capacitance density and decreasing operating voltages, dielectric thickness and process cost. Advances in the fabrication and processing of barium strontium titanate (BST) and lead zirconate titanate (PZT)-based thin films are presented toward attaining these goals in next-generation high-value integrated capacitors. Increasing capacitance density has been demonstrated through the use of large-area electrodes, multilayer structures, and decreased dielectric layer thickness. Capacitance values as high as 10 μF were obtained in a single-layer, 10 cm2 film, and layer thicknesses as small as 9 nm have been achieved using chemical solution deposition. Base metal integration results for BST and PZT films are discussed in terms of additional cost and volume reduction; such films have achieved capacitance densities as high as 1.5 μF/cm2 and electric fields of 25 V/μm.

Fabrication of Perovskite-Based High-Value Integrated Capacitors by Chemical Solution Deposition

We demonstrate films of the well-known ferroelectric lead zirconate titanate (PZT) prepared directly on copper foils by chemical solution deposition (CSD). The films exhibit saturating polarization hysteresis, remanent polarization values of 26μC∕cm2, and permittivities of 800; these properties are comparable to those achieved using semiconductor-grade substrates. The preparation methodology is founded upon an understanding of solution chemistry as opposed to conventional gas-phase ∕ condensed-phase equilibrium approaches. By adopting this technique, base-metal compatibility can be achieved using much lower temperatures, and a broader set of devices can be prepared offering intimate contact with high conductivity, easily patternable, or ferromagnetic metals.

Leslie H. Jimison

Papers

Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates