L
Liang-Yu Chen
Researcher at Glenn Research Center
Publications - 74
Citations - 2228
Liang-Yu Chen is an academic researcher from Glenn Research Center. The author has contributed to research in topics: JFET & Integrated circuit. The author has an hindex of 19, co-authored 69 publications receiving 1986 citations.
Papers
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Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI
Extreme temperature 6H-SiC JFET integrated circuit technology
Philip G. Neudeck,Steven L. Garverick,David J. Spry,Liang-Yu Chen,Glenn M. Beheim,Michael J. Krasowski,M. Mehregany +6 more
TL;DR: In this article, the development of extreme temperature (up to 500 °C) integrated circuit technology based on epitaxial 6H-SiC junction field effect transistors (JFETs) is discussed.
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Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$
P. G. Neudeck,David J. Spry,Liang-Yu Chen,Glenn M. Beheim,Robert S. Okojie,Carl W. Chang,Roger D. Meredith,Terry L. Ferrier,Laura J. Evans,Michael J. Krasowski,Norman F. Prokop +10 more
TL;DR: In this article, the fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported.
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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C
TL;DR: In this paper, short-term demonstrations of packaged 4H-SiC junction field effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature.
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Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors
TL;DR: In this article, the effects of placing a thin layer of silicon dioxide (SiO2) between the Pd and the SiC was examined and the electronic and interfacial properties of the annealed diodes were compared.