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Liangliang Han

Researcher at Chinese Academy of Sciences

Publications -  67
Citations -  1403

Liangliang Han is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Polymer solar cell & Organic solar cell. The author has an hindex of 21, co-authored 67 publications receiving 1239 citations.

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Very broad white-emission spectrum based organic light-emitting diodes by four exciplex emission bands

TL;DR: White light is emitted by an organic light-emitting diode by inserting two blend layers of m-MTDATA:Al(DBM)(3) and TPD:Bphen between an m- MTDATA hole-transport layer and a Bphen electron-transporting layer.
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Improved open-circuit voltage of benzodithiophene based polymer solar cells using bulky terthiophene side group

TL;DR: In this article, the terthiophene side group was introduced as BDT side chain to build a novel two-dimensional (2D) conjugated BDT block with three electron acceptors (DTTz, DPP, DTffBT and TTT).
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Efficient electroluminescence based on a novel binuclear rhenium complex

TL;DR: A binuclear rhenium(I) (Re I ) carbonyl complex with the formula [Re(DF)(CO) 3 Br] 2, where DF represented 4,5-diazafluorene, was designed and synthesized for applications in organic light-emitting diodes (OLEDs).
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Benzodithiophene‐based poly(aryleneethynylene)s: Synthesis, optical properties, and applications in organic solar cells

TL;DR: In this article, the synthesis and characterization of building block of ethynylene-substituted benzo[1,2-b:4,5-b]dithiophene (BDT), and its application in the construction of poly(aryleneethynylene)s (PAEs) are described.
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Dithieno[3,2-b:2′,3′-d]silole-based low band gap polymers: the effect of fluorine and side chain substituents on photovoltaic performance

TL;DR: In this article, three alkyl-thiophene π-bridged polymers with different number of F atoms and side chain substituents are synthesized through a palladium catalyzed Stille coupling reaction, and the optimized P-hDF-based photovoltaic device exhibits an open circuit voltage of 0.593 V, a short-circuit current density of 15.98 mA cm−2, a fill factor of 64.8% and a high energy conversion efficiency of 6.14%.