L
Lijun Zhang
Researcher at Soochow University (Suzhou)
Publications - 41
Citations - 136
Lijun Zhang is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Static random-access memory & Sense amplifier. The author has an hindex of 5, co-authored 38 publications receiving 120 citations.
Papers
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Journal ArticleDOI
Leakage Power Reduction Techniques of 55 nm SRAM Cells
TL;DR: The results indicate that by using the dynamic VDD and source biasing schemes, greater leakage suppressing capability, although with a higher performance loss, can be obtained.
Journal ArticleDOI
Integrated SRAM compiler with clamping diode to reduce leakage and dynamic power in nano-CMOS process
TL;DR: An integrated static random access memory (SRAM) compiler is proposed to reduce both leakage and dynamic power at circuit and architectural level through an extra clamping diode in parallel with a pull-down n-type metal-oxide semiconductor transistor.
Journal ArticleDOI
28-nm Latch-Type Sense Amplifier Modification for Coupling Suppression
TL;DR: This paper explains how the coupling effect interferes with the action of the sense amplifier (SA) and introduces a coupling suppressed SA, which can achieve obvious improvement under differential input in the Monte Carlo simulation.
Proceedings ArticleDOI
A new 6-transistor SRAM cell for low power cache design
TL;DR: In this article, a new 6T-SRAM cell structure of nano-scale technology for low power application is presented, which is closed to the traditional 6T cell, and power consumption is reduced by 22.45% during the write operation.
Journal ArticleDOI
Anisotropic relaxation of a CuO/TiO2 surface under an electric field and its impact on visible light absorption: ab initio calculations
TL;DR: Ab initio calculations on the anisotropic relaxation of a CuO/TiO2 surface under electric fields and the visible light absorption of these relaxed surfaces are reported.