L
Lin Liu
Researcher at Sun Yat-sen University
Publications - 7
Citations - 221
Lin Liu is an academic researcher from Sun Yat-sen University. The author has contributed to research in topics: Laser & Silicon. The author has an hindex of 3, co-authored 7 publications receiving 133 citations.
Papers
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Journal ArticleDOI
Ultrahigh Numerical Aperture Metalens at Visible Wavelengths
Haowen Liang,Qiaoling Lin,Xiangsheng Xie,Qian Sun,Yin Wang,Lidan Zhou,Lin Liu,Xiangyang Yu,Jianying Zhou,Thomas F. Krauss,Juntao Li +10 more
TL;DR: This work introduces and demonstrates a metalens with a high NA and high transmission in the visible range, based on crystalline silicon (c-Si), and envision the front-immersion design to be beneficial for achieving ultrahigh-NA metalenses as well as immersion metalens doublets, thereby pushing metasurfaces into practical applications such as high resolution, low-cost confocal microscopy and achromatic lenses.
Journal ArticleDOI
1305 nm Few‐Layer MoTe2‐on‐Silicon Laser‐Like Emission
Hanlin Fang,Jin Liu,Hongji Li,Lidan Zhou,Lin Liu,Juntao Li,Xue-Hua Wang,Thomas F. Krauss,Yue Wang +8 more
TL;DR: In this article, a few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) was used as a gain material in a silicon photonic crystal L3 nanocavity.
Journal ArticleDOI
Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes.
TL;DR: The QD emission wavelength is extended to 850-880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes and individual QDs are shown to emit nonclassically with clear evidence of photon antibunching.
Posted Content
1305 nm MoTe2-on-silicon Laser
Hanlin Fang,Jin Liu,Hongji Li,Lidan Zhou,Lin Liu,Juntao Li,Xue-Hua Wang,Thomas F. Krauss,Yue Wang +8 more
TL;DR: In this paper, the authors report a unique silicon laser source that employs molybdenum ditelluride (MoTe2) as a gain material in a photonic crystal nanocavity resonator, fabricated in silicon-on-insulator.
Journal ArticleDOI
Morphological engineering of aluminum droplet etched nanoholes for symmetric GaAs quantum dot epitaxy
Xiaoying Huang,Hancheng Zhong,Jiawei Yang,Lin Liu,Jin Liu,Ying Yu,Ying Yu,Siyuan Yu,Siyuan Yu +8 more
TL;DR: This paper systematically investigates the influence of the underlying material, showing the morphological evolution of the nanohole structure as well as symmetric GaAs QDs with an average fine-structure splitting (FSS) of (5.9 ± 1.2) μeV, and indicates how to improve the symmetry of nanoholes to meet the requirements for implementing QDs in entangled photon sources.