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Lingfang Wang

Researcher at University of Electronic Science and Technology of China

Publications -  10
Citations -  118

Lingfang Wang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Laser & Medicine. The author has an hindex of 4, co-authored 4 publications receiving 67 citations.

Papers
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Journal ArticleDOI

All-dielectric metalens for terahertz wave imaging.

TL;DR: This work proposes a metalens based on an all-dielectric metasurface with a sub-wavelength unit size of 0.39λ for terahertz wave imaging and experimentally demonstrate its performance in focusing and imaging, and demonstrates the reversibility of the metalens for imaging.
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Optimization-free approach for generating sub-diffraction quasi-non-diffracting beams.

TL;DR: An optimization-free design approach is proposed and the possibility of generating sub-diffraction quasi-non-diffracting beams with sub-wavelength size for different polarizations by a binary-phase Fresnel planar lens is demonstrated.
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Generating a three-dimensional hollow spot with sub-diffraction transverse size by a focused cylindrical vector wave.

TL;DR: A binary-phase planar lens with an ultra-long focal length (300λ) for the generation of a 3D hollow spot with a cylindrical vector wave provides a promising way to achieve tight 3D optical confinement for different uses that might find applications in super-resolution microscopy, nano-lithography, high-density data storage, Nano-particle optical manipulation, and nano-optical manufacturing.
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Intensive vertical orientation Smith-Purcell radiation from the 2D well-array metasurface.

TL;DR: It is shown that the moving electrons can induce three induced surface currents at the well-array metasurface, where a strong coupling among them takes place, which significantly improves the radiated field intensity and shapes the radiation angle-distribution.
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The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers

TL;DR: In this article , the performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region were investigated for a temperature range of 17 °C-97 °C.