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Liqun Zhang

Researcher at Beijing University of Chemical Technology

Publications -  1266
Citations -  41962

Liqun Zhang is an academic researcher from Beijing University of Chemical Technology. The author has contributed to research in topics: Natural rubber & Elastomer. The author has an hindex of 82, co-authored 1110 publications receiving 31630 citations. Previous affiliations of Liqun Zhang include Kunming University of Science and Technology & Chinese Ministry of Education.

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Suppression of recombination in waveguide in c-plane InGaN-based green laser diodes

TL;DR: In this paper, a potential barrier located at the interface between GaN last barrier and InGaN upper waveguide layer was found to cause strong recombination in upper waveguarantee layer and lower the carrier injection efficiency of green laser diodes when In content is higher than 4%.
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Catalyst-free curing and closed-loop recycling of carboxylated functionalized rubber by a green crosslinking strategy

TL;DR: In this paper, a facile and high-efficiency green crosslinking strategy for the carboxyl-functionalized rubber was reported, which offers a promising way for high-efficient crosslink of diene rubber as well as a real cost-effective and environmentally friendly recovery of end of life rubber materials.
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Comparative full-length transcriptome analysis provides novel insights into the regulatory mechanism of natural rubber biosynthesis in Taraxacum kok-saghyz Rodin roots

TL;DR: In this paper, a comparative transcriptome analysis was conducted between the lines containing high rubber (HR) and low rubber (LR) contents, and a total of 3134 differentially expressed genes (DEGs) were identified.
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Luminescence of EPDM rubber ultrafine fibers containing nanodispersed Eu-complexes

TL;DR: In this paper, the dispersion of Eu-complexes in the fibers was characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and XRD.
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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

TL;DR: In this article, growth conditions were used to control the residual carbon impurity incorporation in p++-GaN layers, and the specific contact resistance (ρc) with various residual carbon concentrations was investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis.