抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Physical Review B

The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a field: two-dimensional (2D) materials In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement Here, we review significant recent advances and important new developments in 2D materials “beyond graphene” We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (ie, silicene, phosphorene, etc) and transition metal carbide- and carbon nitride-based MXenes We then discuss the doping and functionalization of 2

Recent Advances in Two-Dimensional Materials beyond Graphene

In perovskite solar cells, the interfaces between the perovskite and charge-transporting layers contain high concentrations of defects (about 100 times that within the perovskite layer), specifically, deep-level defects, which substantially reduce the power conversion efficiency of the devices1–3. Recent efforts to reduce these interfacial defects have focused mainly on surface passivation4–6. However, passivating the perovskite surface that interfaces with the electron-transporting layer is difficult, because the surface-treatment agents on the electron-transporting layer may dissolve while coating the perovskite thin film. Alternatively, interfacial defects may not be a concern if a coherent interface could be formed between the electron-transporting and perovskite layers. Here we report the formation of an interlayer between a SnO2 electron-transporting layer and a halide perovskite light-absorbing layer, achieved by coupling Cl-bonded SnO2 with a Cl-containing perovskite precursor. This interlayer has atomically coherent features, which enhance charge extraction and transport from the perovskite layer, and fewer interfacial defects. The existence of such a coherent interlayer allowed us to fabricate perovskite solar cells with a power conversion efficiency of 25.8 per cent (certified 25.5 per cent)under standard illumination. Furthermore, unencapsulated devices maintained about 90 per cent of their initial efficiency even after continuous light exposure for 500 hours. Our findings provide guidelines for designing defect-minimizing interfaces between metal halide perovskites and electron-transporting layers. An atomically coherent interlayer between the electron-transporting and perovskite layers in perovskite solar cells enhances charge extraction and transport from the perovskite, enabling high power conversion efficiency.

Perovskite solar cells with atomically coherent interlayers on SnO2 electrodes.

The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

Silicene, a two-dimensional (2D) honeycomb structure similar to graphene, has been successfully fabricated on an Ir(111) substrate. It is characterized as a (√7×√7) superstructure with respect to the substrate lattice, as revealed by low energy electron diffraction and scanning tunneling microscopy. Such a superstructure coincides with the (√3×√3) superlattice of silicene. First-principles calculations confirm that this is a (√3×√3)silicene/(√7×√7)Ir(111) configuration and that it has a buckled conformation. Importantly, the calculated electron localization function shows that the silicon adlayer on the Ir(111) substrate has 2D continuity. This work provides a method to fabricate high-quality silicene and an explanation for the formation of the buckled silicene sheet.

/pdf/buckled-silicene-formation-on-ir-111-3z4m59418z.pdf

Buckled silicene formation on Ir(111).

We report on the configurations and electronic properties of graphyne and graphdiyne nanoribbons with armchair and zigzag edges investigated with first principles calculations. Our results show that all the nanoribbons are semiconductors with suitable band gaps similar to silicon. And their band gaps decrease as widths of nanoribbons increase. We also find that the band gap is at the Γ point for all graphdiyne ribbons and it is at the X point for all graphyne ribbons. Of particular interest, the band gap of zigzag graphyne nanoribbons show a unique “step effect” as the width increases. This property is good for tuning of the energy band gap, as in a certain range of the ribbon width, the energy gap remains constant and in reality the edge cannot be as neat as that in a theoretic model.

Graphyne- and graphdiyne-based nanoribbons: Density functional theory calculations of electronic structures

We report on the configurations and electronic properties of graphyne and graphdiyne nanoribbons with armchair and zigzag edges investigated with first principles calculations. Our results show that all the nanoribbons are semiconductors with suitable band gaps similar to silicon. And their band gaps decrease as widths of nanoribbons increase. We also find that the band gap is at the Gamma point for all graphdiyne ribbons and it is at the X point for all graphyne ribbons. Of particular interest, the band gap of zigzag graphyne nanoribbons show a unique step effect as the width increases. This property is good for tuning of the energy band gap, as in a certain range of the ribbon width, the energy gap remains constant and in reality the edge cannot be as neat as that in a theoretic model.

/pdf/graphyne-and-graphdiyne-based-nanoribbons-density-functional-oksvbsibr5.pdf

Graphyne- and Graphdiyne-based Nanoribbons: Density Functional Theory Calculations of Electronic Structures

We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth temperature and the graphene quality can be improved by adjusting both the growth temperature and ethylene exposure. Rippled and unrippled domains of high quality graphene are observed. The adhesive energy and electronic structure of two models, representing rippled and unrippled graphene, are obtained with density functional theory calculation, which shows that the interaction between graphene and Pt(111) surface is very weak and the electronic structure is nearly the same as that of a free standing graphene.

Epitaxial growth and structural property of graphene on Pt(111)

We predict the existence of a Dirac state in a monolayer ${\mathrm{TiB}}_{2}$ sheet $(m\text{\ensuremath{-}}{\mathrm{TiB}}_{2})$, a two-dimensional metal diboride, based on first-principles calculations. The band structure of $m\text{\ensuremath{-}}{\mathrm{TiB}}_{2}$ is found to be characterized with anisotropic Dirac cones with the largest Fermi velocity of $0.57\ifmmode\times\else\texttimes\fi{}{10}^{6}$ m/s, which is about one-half of that of graphene. The Dirac point is located at the Fermi level between the $K$ and $\ensuremath{\Gamma}$ points, with the Dirac states arising primarily from the $d$ orbitals of Ti. Freestanding $m\text{\ensuremath{-}}{\mathrm{TiB}}_{2}$ exhibits a bending instability, so that a planar $m\text{\ensuremath{-}}{\mathrm{TiB}}_{2}$ needs to be stabilized on a substrate. The calculation of $m\text{\ensuremath{-}}{\mathrm{TiB}}_{2}$ on a $h$-BN substrate reveals a negligible influence of the $h$-BN substrate on the electronic properties of $m\text{\ensuremath{-}}{\mathrm{TiB}}_{2}$. Our findings extend the Dirac materials to metal diborides.

http://www.eng.utah.edu/~fliu/pdfs/PhysRevB.90.161402.2014.pdf

Lizhi Zhang

Papers

Buckled silicene formation on Ir(111).

Graphyne- and graphdiyne-based nanoribbons: Density functional theory calculations of electronic structures

Graphyne- and Graphdiyne-based Nanoribbons: Density Functional Theory Calculations of Electronic Structures

Epitaxial growth and structural property of graphene on Pt(111)

Prediction of a Dirac state in monolayer TiB 2