L
Lucian Prejbeanu
Researcher at University of Grenoble
Publications - 12
Citations - 656
Lucian Prejbeanu is an academic researcher from University of Grenoble. The author has contributed to research in topics: Tunnel magnetoresistance & Layer (electronics). The author has an hindex of 4, co-authored 12 publications receiving 224 citations. Previous affiliations of Lucian Prejbeanu include Centre national de la recherche scientifique & Commissariat à l'énergie atomique et aux énergies alternatives.
Papers
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Journal ArticleDOI
Review on spintronics: Principles and device applications
Atsufumi Hirohata,Keisuke Yamada,Yoshinobu Nakatani,Lucian Prejbeanu,Bernard Dieny,Philipp Pirro,Burkard Hillebrands +6 more
TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.
Proceedings ArticleDOI
Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications
V. D. Nguyen,Philippe Sabon,Jyotirmoy Chatterjee,L. Tille,P. Veloso Coelho,Stéphane Auffret,Ricardo C. Sousa,Lucian Prejbeanu,Eric Gautier,Laurent Vila,Bernard Dieny +10 more
TL;DR: In this paper, a scalable approach for nano-patterning at very narrow pitch (pitch = 15F, F = MTJ dot diameter) by growing the MTJ material on pre-patterned conducting non-magnetic pillars without postdeposition etching is presented.
Proceedings ArticleDOI
Towards high density STT-MRAM at sub-20nm nodes
V. D. Nguyen,N. Perrissin,Steven Lequeux,Jyotirmoy Chatterjee,L. Tille,Stéphane Auffret,Ricardo C. Sousa,Eric Gautier,Laurent Vila,Lucian Prejbeanu,Bernard Dieny +10 more
TL;DR: In this article, the authors proposed innovative approaches to solve the nanopatterning of the magnetic tunnel junctions at 1x feature size (F) and narrow pitch (pitch < 2F) of STT-MRAM at sub-20nm nodes.
Book ChapterDOI
Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits
B. Dieny,B. Dieny,Ricardo C. Sousa,Ricardo C. Sousa,Guillaume Prenat,Guillaume Prenat,Lucian Prejbeanu,Lucian Prejbeanu,O. Redon +8 more
TL;DR: This chapter is devoted to magnetic random access memories (MRAMs) based on magnetic elements called magnetic tunnel junctions (MTJs), which can yield a totally new approach in the way electronic devices are designed.
Journal ArticleDOI
Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance.
Daniel Sanchez Hazen,Stéphane Auffret,I. Joumard,Laurent Vila,Liliana D. Buda-Prejbeanu,Ricardo C. Sousa,Lucian Prejbeanu,Bernard Dieny +7 more
TL;DR: In this paper, double magnetic tunnel junctions comprising a magnetically switchable assistance layer are used as memory cells in spin transfer torque magnetic random access memory (STT-MRAM) devices.