다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n-type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n-type ZnO-based semiconductor oxide sensing materials.

Advances in Doped ZnO Nanostructures for Gas Sensor.

The applications of magnetron sputtering technology on the surface coating of fabrics have attracted more and more attention from researchers. Over the past 15 years, researches on magnetron sputtering coated fabrics have been mainly focused on electromagnetic shielding, bacterial resistance, hydrophilic and hydrophobic properties and structural color etc. In this review, recent progress of the technology is discussed in detail, and the common target materials, technologies and functions and characterization of coated fabrics are summarized and analyzed. Finally, the existing problems and future prospects of this developing field are briefly proposed and discussed.

https://www.mdpi.com/1996-1944/11/10/1953/pdf/1

Recent Progress in Magnetron Sputtering Technology Used on Fabrics

Enhanced magnetic, antibacterial and optical properties of Sm doped ZnO thin films: Role of Sm doping

In the present work, we have fabricated a highly photo responsive Schottky barrier diode based on cerium infused vanadium pentoxide thin film (Ce-V2O5) as a interfacial layer. It was coated on a glass slide by low-cost sol-gel spin-coating technique and annealed at 500 °C. Structure, surface morphology, optical and electrical characteristic of Ce infused V2O5 films with different Ce concentrations viz 0, 2, 4 and 6 wt% were investigated. X-ray diffraction (XRD) pattern exposed that all coated films are tetragonal structure. And a peak shift was recorded after doping Ce ion into the V2O5 system. FE-SEM images showed a smooth nanorods and nanoplate-like structures in nano-scale region. Topology view by AFM showed a significant decrease in surface roughness of the film at different wt.% of Ce. The incorporation of Ce concentration based on the optical absorbance and band gap energy were studied, using UV–vis spectroscopy. Current-voltage (I–V), characteristics, photo-diode parameters of the Cu/Ce-V2O5/n-Si diodes were evaluated under dark and light exposed conditions. A maximum quantum efficiency of 25.54 % was achieved for the MIS diode fabricated with 6 % of Ce. The photosensitivity of the Cu/Ce-V2O5/n-Si diode 100 times higher than pure diode. Photodiode parameters and I–V analysis revealed that Ce with 6 wt.% is appropriate for the development of high quality photodiode and photo detector applications based to its electrical-performance.

Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

M.A.M. Ahmed

Papers

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition