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Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

TLDR
In this paper, the effect of Sm doping of ZnO nanorods on their structural, morphology, and optical properties were investigated using X-ray diffraction patterns and field emission scanning electron microscopy images.
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This article is published in Materials Science in Semiconductor Processing.The article was published on 2018-06-01 and is currently open access. It has received 50 citations till now. The article focuses on the topics: Nanorod & Chemical bath deposition.

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Citations
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Recent Progress in Magnetron Sputtering Technology Used on Fabrics

TL;DR: In this review, recent progress of the technology is discussed in detail, and the common target materials, technologies and functions and characterization of coated fabrics are summarized and analyzed.
Journal ArticleDOI

Enhanced magnetic, antibacterial and optical properties of Sm doped ZnO thin films: Role of Sm doping

TL;DR: In this article, thin films of Sm3+ ions doped ZnO were prepared by dip coating method to enhance the oxygen vacancy and obtain crystallinity, the thin films were annealed at 400-°C for 2-h in air.
Journal ArticleDOI

A route towards enhanced UV photo-response characteristics of SnO2/p-Si based heterostructures by hydrothermally grown nanorods

TL;DR: In this article, a spin-coated SnO2 thin film was used to improve the UV photo response properties of the heterojunction photodiodes, and the resulting structure offers an improvement in light harvesting and photo response characteristics of the devices.
Journal ArticleDOI

GZO/Si Photodiodes Exhibiting High Photocurrent-to-Dark-Current Ratio

TL;DR: ZnO:Ga (GZO)/Si photodiodes having different thicknesses of GZO layer are fabricated by the sol-gel spin-coating method as mentioned in this paper.
Journal ArticleDOI

Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

TL;DR: In this article, the structural and optical properties of the sol-gel spin coating are studied, and the electrical characteristics of the Schottky diodes are investigated using x-ray diffraction and scanning electron microscopy, respectively.
References
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Journal ArticleDOI

Mechanisms behind green photoluminescence in ZnO phosphor powders

TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
Journal ArticleDOI

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

TL;DR: In this paper, the capacitance matrix was calculated for different chain lengths using the software package FastCap MIT (1992) and a ligand shell dielectric constant of 3.14 aF.
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Growth of Arrayed Nanorods and Nanowires of ZnO from Aqueous Solutions

TL;DR: In this article, a template-less and surfactant-free aqueous method is proposed to generate metal oxide thin films with controlled complexity. But the synthesis involves a templateless and a surfactent-free approach, which enables the generation of, at large-scale, low-cost, and moderate temperatures, advanced metal oxide particle-to-particle thin films.
Journal ArticleDOI

The Scherrer equation versus the 'Debye-Scherrer equation'

TL;DR: Paul Scherrer and Peter Debye developed powder X-ray diffraction together, but it was Scherrer who figured out how to determine the size of crystallites from the broadening of diffraction peaks.
Journal ArticleDOI

Bound exciton and donor–acceptor pair recombinations in ZnO

TL;DR: In this paper, the optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminecence (CL) measurements.
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Q1. What contributions have the authors mentioned in the paper "Effect of sm doping zno nanorods on structural optical and electrical properties of schottky diodes prepared by chemical bath deposition" ?

In this study, pure and Sm doped ZnO nanorods from 0. 0 to 5. 5 at. % were synthesized using the chemical bath deposition method at 90◦ Furthermore, the current-voltage characteristics of a fabricated Schottky diodes showed a good rectifying behavior when ZnO doped with Sm at 1. 5 at. %. 

The ITO substrate wast adopted for this study due to it is transparency in the visible region and low price compared to the Si and GaN substrates, respectively. 

The growth rate of the nanorods was suppressed by the Sm doping ZnO nanorods as seen by FE-SEM where the density and length of the nanorods decreased upon Sm doping concentration. 

Since the band gap of wurtzite ZnO is a direct band gap, the optical band gap can be calculated using Tauc’s law [45]: (αhν)2 = C(hν − Eg) (4) where, α is the absorption coefficient, hν is the phonon energy, C is constant and Eg is the optical energy gap. 

The purpose of this study is to investigate the effect of Sm doping on the crystallization, photoluminescence, Raman scattering, UV-vis, and electrical properties at room temperature. 

The peak at 440 cm−1 appears to be sharp and narrow and dominates in the Raman scattering spectra, a good indication that as-synthesised samples have high crystallinity, and is supported by the XRD results. 

The broad emission (deep-level emission) in the green-yellow part of the visible light spectrum is due to different point defects, either intrinsic [52, 53, 54] or extrinsic [55]. 

X-ray photoelectron spectroscopy (XPS) data were acquired at room temperature with a SPECS Phoibos 150 electron energy analyser, using a monochromatized Al Kα photon source (hν = 1486.71 eV). 

The obtained ΦB0 values from the fit for undoped and Sm doped ZnO nanorods at 1.5 at.% were found to be 0.55 eV and 0.72 eV, respectively. 

It should be mentioned that the zinc and the dopant sources were dissolved separately, stirred for 10 minutes and finally mixed together and stirred again for another 15 minutes to make sure the homogeneous solution are obtained. 

This peak may be attributed to the transition in energy in ZnO between anelectron in Zn interstitial defect states and a hole in the valence band. 

the FWHM increased with increasing Sm doping concentrations indicating that more defects were introduced into the ZnO nanorods. 

Various techniques have been used to synthesize ZnO nanoparticles, for example chemical vapor deposition [24], pulse laser deposition [25], molecular beam epitaxy [26], sol-gel [27] and chemical bath deposition (CBD) [28, 29, 30]. 

It should be mentioned that the molar ratio of zinc acetate to MEA was kept 1:1. ITO substrates were cleaned with ethanol, deionized water, acetone and deionized water ultrasonically 5 minutes each, in this sequence and finally nitrogen gas was used to blown the substrates dry. 

As one can see in the inset of Fig. 3, the peaks at 440 cm−1 are slightly shifted towards lower wavenumber when increasing the Sm doping concentration. 

It should be noted that the UV emission shows a small peak around 388 nm and it becomes more pronounce with increasing the Sm content (see Fig. 5). 

The presence of strong UV emission of pure and Sm doped ZnO nanorods in PL spectra indicate that the as-synthesized samples have a good crystal quality with excellent optical properties compared to work reported by Jingyuan et al. [18] and Velusamy and co-workers [50].