다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Physical Review B

我的台灣, 看見心靈的故鄉 =2009林磐聳藝術與設計展

Journal of Scientific Instruments Editor: Dr H R Lang Vol 28 and Supplement No 1, 1951 Pp xvi + 388 + iii + 80 (London: Institute of Physics, 1951) Bound, £3 12s; unbound, £3

/pdf/a-review-of-scientific-instruments-50cfd4j98s.pdf

A Review of Scientific Instruments

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Electrical resistivity surveying methods have been widely used to determine the thickness and resistivity of layered media for the purpose of assessing groundwater potential and siting boreholes in fractured unconfined aquifers. Traditionally, this has been done using one-dimensional (1D) vertical electrical sounding (VES) surveys. However, 1D VES surveys only model layered structures of the subsurface and do not provide comprehensive information for interpreting the structure and extent of subsurface hydro-geological features. As such the incorporation of two-dimensional (2D) geophysical techniques for groundwater prospecting has often been used to provide a more detailed interpretation of the subsur- face hydro-geological features from which potential sites for successful borehole location are identified. In this study, 2D electrical resistivity tomography was combined with 1D VES to produce a subsurface resistivity model for assessing the availability of groundwater in the basaltic-greenstone formation of the Matsheumhlope well field in Bulawayo, Zimbabwe. Low resistivity readings ( 500 Xm) around the western margin of the study area suggests a low groundwater potential. 2D elec- trical resistivity surveys provide a more detailed subsurface structure and may assist in identifying the configuration of possible fractures which could conduct groundwater into the shallow subsurface of study area. It is concluded that 2D electrical resistivity methods is an effective tool for assessing the avail- ability of groundwater in the highly weathered and fractured basaltic greenstone rocks. The methods pro- vided a more precise hydro-geophysical model for the study area compared to the traditional VES. Results from this study are useful for technical groundwater management as they clearly identified suitable bore- hole locations for long term groundwater prospecting.

http://basin.earth.ncu.edu.tw/Course/SeminarII/abstract2014_1/2015.03.12_FangMingHsu/Electrical%20resistivity%20survey%20for%20groundwater%20investigations%20and%20shallow%20subsurface%20evaluation%20of%20the%20basaltic-greenstone%20formation%20of%20the%20urban%20Bulawayo%20aquifer.pdf

Electrical resistivity survey for groundwater investigations and shallow subsurface evaluation of the basaltic-greenstone formation of the urban Bulawayo aquifer

Metal-oxide-semiconductor (MOS) structures were formed on n-ZnO and the electrical properties were compared to Au Schottky barrier diodes (SBDs) on similar ZnO. After evaporating Ni onto either ZnO, Si or glass, the thin films were oxidised to produce transparent, resisitive layers. The structure and composition of these layers were studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron microscopy. The electrical properties were investigated by variable temperature current–voltage ( I – V ) and four-point probe measurements, whereas the optical properties were investigated by photospectrometry. The influence of oxidation temperature on the resistivity of the nickel oxide layers was used to optimise the processing conditions. NiO layers had a maximum resistivity of approximately 100 Ω cm after oxidation and bandgap of 3.5–3.6 eV at room temperature. The rectifying qualities of the junctions (using Pd gates) were sufficient for DLTS measurements of ZnO in the temperature range 20–390 K.

Jackie M. Nel

Papers

Electrical resistivity survey for groundwater investigations and shallow subsurface evaluation of the basaltic-greenstone formation of the urban Bulawayo aquifer

Fabrication and characterisation of NiO/ZnO structures

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Electrical characterization of growth-induced defects in bulk-grown ZnO

Microstructures of electrodeposited CdS layers