International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

In this research, the study and implementation of the t-type parallel resonant dc–dc converter in high-voltage power supplies for travelling wave tube applications is presented. The proposed converter shares the benefits of the traditional full-bridge parallel resonant dc–dc converter, such as zero voltage switching on primary side switches over a wide load range, symmetric three-level voltage across the transformers primary winding, and integration of transformers leakage inductance and winding capacitance during its basic operation. However, only two switches are subjected to the input voltage, while the other two switches are subjected to half of the input voltage. Theoretical analysis, commutation analysis, and design guidelines are presented. The theoretical analysis validation and efficiency investigation are conducted through a t-type parallel resonant converter prototype, which operates with 1.5 kW and 97.12% efficiency. Hence, experimental results of a travelling wave tube power supply prototype operating with 1.5 kW of output power, 400 Vdc input, and four high output voltages, whose measurements results are $V_{o1}=1382\,\rm {V}$ , $V_{o2}=3505\,\rm {V}$ , $V_{o3}= 1504\,\rm {V}$ , and $ V_{o4}=3338\,\rm {V}$ , confirm the feasibility of the proposed implementation.

High Voltage Power Supply Using a T-Type Parallel Resonant DC–DC Converter

This paper presents the steady state and resonant current analysis of a Forward-Flyback Voltage Multiplier operating in discontinuous conduction mode. The operation stages are approached, taking into account the resonant current. The static gain and the conditions for the operations modes are obtained. A sinusoidal approximation is proposed to represent the resonant current with respect to the number of stages, voltage multiplier capacitors and leakage inductance. The characteristics of voltage sharing among capacitors, that allows the use of small voltage components, and the high-gain with reduced turns of the transformer are verified. Bench tests were made for a 200 V/2000 V prototype, from one to five stages, highlighting the overall circuit effects for a 200 W output power. Obtained waveforms for different number of voltage multiplier stages validate the theoretical and simulated results, making this converter an alternative to isolated DC/DC systems where the output voltage must be higher than the input voltage.

DCM forward-flyback converter integrated with a 5-order cockcroft-walton voltage multiplier: A steady-state and resonant current analysis

Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure

\n\n This paper describes the design of 5 V to 6 kV DC-DC converter by using a switching\nregulator with Cockroft-Walton (C-W) voltage multiplier for a high voltage power supply module.\n\n\n\n The proposed design consists of Pulse Width Modulation (PWM) controller circuit, voltage\nmultiplier, and feedback signal. A single unit of 5 V input triggers LT1618 controller circuit to generate\n20 V which then produces 300 V from LT8331 output that is connected to diode-capacitor multiplier\ncircuit to achieve final 6 kV. A negative feedback signal is required to stabilize an output voltage. With\nthe implementation of C-W voltage multiplier technique, the output is boosted up as required from the\ninput signal voltage 5 V DC.\n\n\n\n The LTspice simulation results indicate that the proposed DC converter can generate 6.20 kV.\nLine regulation of 17 % and the load regulation of 14 % are obtained based on the proposed design.\n\n\n\n The proposed design is suitable for high voltage power supply module.\n

5V to 6kV DC-DC Converter Using Switching Regulator with Cockcroft-Walton Voltage Multiplier for High Voltage Power Supply Module

The high voltage DC power supply widely used for space communication and for industry consist of multistage rectifier circuit. To produce 6KV output voltage, Cockroft-Walton multiplier circuits are applied by reducing number of stages from 1200 into 32 stages without using transformer. With the implementation of this technique, it can minimize the volume of the circuit to be integrated on a single chip and it also can reduce associated power loss in the circuit. By eliminating the transformer method, cost and size for making Cockroft-Walton Voltage Multiplier are reduced. Specification need to be considered for designing a multiplier is size of component must use within the range of expected load current and output voltage The details description of the simulation, design, development and implementation of this works are done using Cadence PSPICE software. Results are present in term of the performances and efficiency.

Design of DC high voltage and low current power supply using Cockroft-Walton (C-W) voltage multiplier

A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers.  The effect of the different dielectric constants ( k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low- k and high- k dielectric materials. The dielectric materials used in this study with high- k are Al 2 O 3 and HfO 2 , while the low- k dielectric materials are SiO 2 and Si 3 N 4 . The results demonstrate that the dielectric materials with high- k produce the highest capacitance. Results also show that metal-Al 2 O 3 interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.

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The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

This paper reports on the design, implementation, and characterization of a trench-filled capacitor in complementary Metal-Oxide-Semiconductor (CMOS) grade silicon. In order to achieve high capacitance value in MOS capacitor, trench technology is applied to improved capacitance. The simulation executed by using Synopsys's Sentaurus TCAD. A C-V measurement was done between two different structures of MOS capacitor which are using planar and trench technology. A MOS capacitor with planar technology achieved 4.5 fF meanwhile trench technology achieved a much higher capacitance which is 1.325 pF. A test of varied trench has also been carried out to verify the basic fundamentals of MOS capacitor. It shows that a deeper trench helps to increase higher capacitance.

M. A. Zulkifeli

Papers

Design of DC high voltage and low current power supply using Cockroft-Walton (C-W) voltage multiplier

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

Effect on different geometric dimensions of metal-oxide-semiconductor capacitor by using TCAD simulation