M
M. D. Jack
Researcher at Raytheon
Publications - 7
Citations - 252
M. D. Jack is an academic researcher from Raytheon. The author has contributed to research in topics: Molecular beam epitaxy & Avalanche photodiode. The author has an hindex of 6, co-authored 7 publications receiving 242 citations.
Papers
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Journal ArticleDOI
Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
J. L. Johnson,L. A. Samoska,Arthur C. Gossard,James L. Merz,M. D. Jack,George R. Chapman,B. A. Baumgratz,K. Kosai,S. M. Johnson +8 more
TL;DR: In this article, the InAs/Ga1−xInxSb strained-layer superlattice (SLS) holds promise as an alternative III-V semiconductor system for long wavelength infrared detectors.
Proceedings ArticleDOI
Ultra-High sensitivity APD based 3D LADAR sensors: linear mode photon counting LADAR camera for the Ultra-Sensitive Detector program
Jim Asbrock,Steven L. Bailey,D. Baley,J. Boisvert,George R. Chapman,Gina M. Crawford,T. J. de Lyon,B. Drafahl,John Edwards,Eileen M. Herrin,C. Hoyt,M. D. Jack,Robert E. Kvaas,K. Liu,William McKeag,Rajesh D. Rajavel,Valerie Randall,S. Rengarajan,J. Riker +18 more
TL;DR: In this article, the authors present an update of this development work: the basic amplifier and APD component performance, the front end architecture, the demonstration of single photon detection using a simple 4 × 4 SCA and the design and evaluation of critical components of a fully integrated photon counting camera under development in support of the Ultra-Sensitive Detector (USD) program sponsored by AFRL-Kirtland.
Journal ArticleDOI
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection
T. J. de Lyon,Bonnie A. Baumgratz,George R. Chapman,Eli E. Gordon,Andrew T. Hunter,M. D. Jack,J. E. Jensen,W. B. Johnson,B. Johs,K. Kosai,W. Larsen,Gregory L. Olson,M. Sen,B. Walker,O. K. Wu +14 more
TL;DR: In this paper, the authors used molecular-beam epitaxy to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 μm spectral range, as an alternative technology to existing III-V APD detectors.
Journal ArticleDOI
MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3-1.6 mm avalanche photodetectors
Owen K. Wu,Rajesh D. Rajavel,Terry De Lyon,John E. Jensen,M. D. Jack,Ken Kosai,George R. Chapman,Sanghamitra Sen,Bonnie A. Baumgratz,B. Walker,Bill Johnson +10 more
TL;DR: In this paper, an all molecular beam epitaxially grown HgCdTe multi-layer heterojunction structure on CdZnTe substrates was presented for backside illumination.
Journal ArticleDOI
HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures
T. J. de Lyon,Gregory L. Olson,John A. Roth,J. E. Jensen,Andrew T. Hunter,M. D. Jack,Steven L. Bailey +6 more
TL;DR: In this paper, the application of spectroscopic ellipsometry (SE) for real-time composition determination during molecular beam epitaxy (MBE) growth of HgCdTe alloys with x > 0.5 is reported.