M. I. Fedorov

TL;DR: In this paper, a detailed investigation of thermoelectric compounds and their quasibinary alloys is presented, and it is shown that the combination of transport properties and band structure features has the most promising performance for thermolectric applications.

TL;DR: A review of the common techniques used for measuring thermoelectric transport properties necessary for calculating the temperature figure of merit, zT, is given in this article, where advice for improving the data quality in Seebeck coefficient, electrical resistivity, and thermal conductivity (from flash diffusivity and heat capacity) measurements are given together with methods for identifying possible erroneous data.

TL;DR: In this paper, an experimental equation for the growth of MnSi was proposed for the interval between the MnSi layers and amount of doped Ge content, and the crystallinity of Ge-doped MnSi~1.7 was measured as a function of Ge content at room temperature.

TL;DR: In this article, the transport properties of Mg2Si 0.4Sn 0.6 (X = Si, Ge) solid solutions are investigated and it is shown that these materials can be rendered p-type with a hole concentration of up to 4 × 1019 cm−3.