M
M.P. dos Santos
Researcher at University of Évora
Publications - 55
Citations - 1800
M.P. dos Santos is an academic researcher from University of Évora. The author has contributed to research in topics: Sputtering & Thin film. The author has an hindex of 23, co-authored 55 publications receiving 1709 citations. Previous affiliations of M.P. dos Santos include University of Minho & Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa.
Papers
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Journal ArticleDOI
Investigations of titanium oxide films deposited by d.c. reactive magnetron sputtering in different sputtering pressures
Lijian Meng,M.P. dos Santos +1 more
TL;DR: In this paper, the dependence of structural and optical properties of films, and film composition, on the sputtering pressure was studied, and the results of the X-ray diffraction showed that all films only have the anatase TiO2 phase.
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Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature
Lijian Meng,M.P. dos Santos +1 more
TL;DR: The structural, optical and electrical properties of ITO films have been characterized by X-ray diffraction, scanning electron microscopy, optical transmittance and reflectance, sheet resistance and electrical resistivity measurements.
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The effect of substrate temperature on the properties of d.c. reactive magnetron sputtered titanium oxide films
TL;DR: In this paper, the effects of substrate temperature on the films' properties are discussed and the results of X-ray diffraction show that all films have an anatase crystal structure.
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Study of the structural properties of ZnO thin films by x-ray photoelectron spectroscopy
TL;DR: In this article, X-ray photoelectron spectroscopy analysis was performed on ZnO films prepared on glass substrates by DC reactive magnetron sputtering at different substrate temperatures (room temperature to 450°C).
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Optical and structural properties of vanadium pentoxide films prepared by d.c. reactive magnetron sputtering
TL;DR: The structural properties of the vanadium pentoxide films were studied by X-ray diffraction, scanning electron microscopy and Raman spectra as mentioned in this paper, and the optical parameters of the films were calculated by fitting the transmittance using the classical model.