M
M. R. Ashwin Kishore
Researcher at Central University of Tamil Nadu
Publications - 15
Citations - 247
M. R. Ashwin Kishore is an academic researcher from Central University of Tamil Nadu. The author has contributed to research in topics: Photocatalytic water splitting & Water splitting. The author has an hindex of 6, co-authored 14 publications receiving 149 citations. Previous affiliations of M. R. Ashwin Kishore include Seoul National University & Uppsala University.
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Tailoring the Electronic Band Gap and Band Edge Positions in the C2N Monolayer by P and As Substitution for Photocatalytic Water Splitting
TL;DR: In this article, the authors reported an improved photocatalytic water splitting activity by P and As substitution at the N-site in the C2N monolayer using state-of-the-art hybrid density functional calculations.
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Enhanced Photocatalytic Water Splitting in a C2N Monolayer by C‐Site Isoelectronic Substitution
TL;DR: In this paper, an improved photocatalytic water splitting activity in a C2 N monolayer by isoelectronic substitutions at the C-site, based on density functional calculations, was reported.
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Influence of hydrogen and halogen adsorption on the photocatalytic water splitting activity of C2N monolayer: A first-principles study
TL;DR: In this paper, the influence of molecular adsorbates such as H2, F2, Cl2, Br2, and I2 on the electronic properties and photocatalytic activity of the nitrogenated holey graphene (C2N) using hybrid density functional calculations including van der Waals interaction.
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Two-Dimensional CdX/C2N (X = S, Se) Heterostructures as Potential Photocatalysts for Water Splitting : A DFT Study
TL;DR: This study demonstrates that the CdS/C 2N and CdSe/C2N heterostructures are suitable materials to split water (from various sources) in different ranges of pH values.
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Electronic and Magnetic Structures of Hole Doped Trilayer La4–xSrxNi3O8 from First-Principles Calculations
Lokanath Patra,M. R. Ashwin Kishore,R. Vidya,Anja Olafsen Sjåstad,Helmer Fjellvåg,Ponniah Ravindran,Ponniah Ravindran +6 more
TL;DR: It is found that La4Ni3O8 is a C-type anti-ferromagnetic (C-AFM) Mott insulator in agreement with previous experimental and theoretical observations and the role of hole doping on electronic structure, phase stability, and magnetic properties is found.