M
M.R. da Silva
Researcher at University of Lisbon
Publications - 39
Citations - 318
M.R. da Silva is an academic researcher from University of Lisbon. The author has contributed to research in topics: Ion implantation & Magnetic semiconductor. The author has an hindex of 9, co-authored 39 publications receiving 305 citations. Previous affiliations of M.R. da Silva include Instituto Superior Técnico & University of Aveiro.
Papers
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Journal ArticleDOI
Micron-scale analysis of SiC/SiCf composites using the new Lisbon nuclear microprobe
TL;DR: In this paper, the layout and modes of operation of the new microprobe, which is located on a 3.1 MV single-ended Van de Graaff accelerator, are described.
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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
L. M. C. Pereira,Ulrich Wahl,Stefan Decoster,J. G. Correia,M.R. da Silva,André Vantomme,João P. Araújo +6 more
TL;DR: In this paper, the lattice location of Mn in heavily p-type doped GaAs by means of β− emission channeling from the decay of M56n was reported. And the authors found that interstitial Mn is immobile up to 400°C, with an activation energy for diffusion of 1.7-2.3 eV.
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Mixed Zn and O substitution of Co and Mn in ZnO
L. M. C. Pereira,L. M. C. Pereira,Ulrich Wahl,Stefan Decoster,J. G. Correia,lmarina Pinto de Almeida Amorim,M.R. da Silva,João P. Araújo,André Vantomme +8 more
TL;DR: The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies as discussed by the authors, and this occupancy can be correctly predicted based on chemical intuition, but not always.
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Evidence of N substitution by Mn in GaN
L. M. C. Pereira,L. M. C. Pereira,L. M. C. Pereira,Ulrich Wahl,J. G. Correia,Stefan Decoster,L. M. Amorim,M.R. da Silva,João P. Araújo,André Vantomme +9 more
TL;DR: In this article, the lattice location of Mn atoms in wurtzite GaN using emission channeling is reported, and the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies and stabilized by a highly charged state of the Mn cations.
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Lattice location of Tl and diffusion studies of Tl and Hf implanted in magnesium
TL;DR: In this paper, the diffusion behavior of thallium and hafnium implanted in magnesium single crystals and the lattice location in magnesium were studied using the Rutherford backscattering/channeling technique.