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Eduardo Alves

Researcher at Instituto Superior Técnico

Publications -  854
Citations -  14271

Eduardo Alves is an academic researcher from Instituto Superior Técnico. The author has contributed to research in topics: Ion implantation & Thin film. The author has an hindex of 52, co-authored 818 publications receiving 12607 citations. Previous affiliations of Eduardo Alves include University of Montpellier & University of Lisbon.

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Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping

TL;DR: In this article, the authors used high-resolution reciprocal space mapping (RSM) to detect composition and strain gradients independently from the elongation of broadened reciprocal lattice points in asymmetric x-ray reflections.
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Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper

TL;DR: In this paper, thin films of copper oxide were obtained through thermal oxidation of evaporated metallic copper (Cu) films on glass substrates, and X-ray diffraction (XRD) studies confirmed the cubic Cu phase of the as-deposited films.
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Characterisation of Ti1−xSixNy nanocomposite films

TL;DR: In this paper, a two-phase system composed of a nanocrystalline f.c. structure was synthesized by RF reactive sputtering from Ti and Si elemental targets, in an Ar/N 2 gas mixture.
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Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study

TL;DR: In this paper, a depth-resolved study of the optical and structural properties of wurtzite InGaN/GaN bilayers grown by metallorganic chemical vapor deposition on sapphire substrates is reported.
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Structural, optical and mechanical properties of coloured TiNxOy thin films

TL;DR: In this paper, coloured films based on single layered titanium oxynitride (TiN x O y ) compounds were prepared by r.f. magnetron sputtering under variation of process parameters such as bias voltage and flow rate of reactive gases.