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M

M. Saleem

Researcher at Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Publications -  7
Citations -  46

M. Saleem is an academic researcher from Ghulam Ishaq Khan Institute of Engineering Sciences and Technology. The author has contributed to research in topics: Thin film & Semiconductor. The author has an hindex of 3, co-authored 7 publications receiving 42 citations.

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Humidity sensing properties of CNT-OD-VETP nanocomposite films

TL;DR: In this article, the effect of humidity on the electrical properties of the nanocomposite thin films was investigated by measurement of the capacitance and dissipation of the samples at two different frequencies of the applied voltage: 120 Hz and 1 kHz.
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Pressure sensitive organic field effect transistor

TL;DR: In this article, the effect of pressure on the properties of the fabricated field effect transistor (FET) with metal (aluminum) and semiconductor (copper phthalocyanine) Schottky junction was investigated.
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Fabrication and Investigation of the Charge/Discharge Characteristics of Zinc/PVA-KOH/Carbon Cell

TL;DR: In this paper, a zinc/polyvinyl alcohol-potassium hydroxide/carbon cell with PVA-KOH gel has been used as an electrolyte with a ratio of 60:40, while zinc and carbon rods served as electrodes.
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I-V characteristics of Ag/OD-MO/Ag surface-type diode fabricated by deposition of organic film from solution under the effect of an electric field

Abstract: In this study, Ag/OD-MO/Ag surface-type diode was fabricated by drop-casting orange dye and methyl orange blend thin film from 1.0 wt.% aqueous solution, under the effect of an electric field, on a glass substrate with preliminary deposited silver electrodes. Geometrical length and width of the semiconducting channel between metallic electrodes were equal to 40 μm and 21 mm, respectively. The dark I-V characteristics exhibited strong rectification behaviour though both electrodes were from the same metal. The average value of rectification ratio (RR) was 27 and it was found that RR varies with applied voltage in the range of 1–40. The dark I-V characteristics were simulated by modified Shockley equation and space-charge limited currents (SCLC) approach. Different diode parameters were calculated from current-voltage characteristics. The diode showed non-ideal I-V behaviour with a quality factor greater than unity. Energy band diagram is proposed for the Ag/OD-MO/Ag surface-type diode.
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Investigation of rectenna for microwave power conversion

TL;DR: In this article, the fabrication of organic semiconductor (OS) rectifiers and an investigation of rectifying antenna (rectenna) under the effect of microwave power was presented. But the rectifier was fabricated by thermal deposition of Ag, Au and NiPc thin films on a thoroughly cleaned glass substrate, and the measured I-V characteristics of the cell showed rectifying behavior.