Showing papers by "M. T. S. Nair published in 2014"
TL;DR: In this article, a thin film solar cell of CdS/Sb 2 S 3 /C-Ag was developed on glass substrates coated with SnO 2 :F (FTO) by thermal evaporation of Sb 2S 3 powder.
99 citations
58 citations
TL;DR: In this article, a stable CdS/Sb2S3/SnSe heterojunction thin-film solar cell was constructed on a 10-5 Torr with substrate temperature of 400 °C.
Abstract: We report a stable CdS/Sb2S3/SnSe heterojunction thin film solar cell deposited on SnO2:F (FTO)–coated glass substrates. Thermal evaporation at 10-5 Torr with substrate temperature of 400 °C was used to deposit Sb2S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2S3 has an optical band gap (Eg) of 1.48 eV and photoconductivity (σp) of 4x10-7 Ω-1 cm-1 and thin film SnSe has an Eg of 1.28 eV and σp of 2 Ω-1 cm-1. The chemically deposited CdS thin film heated at 400 °C shows an Eg of 2.34 eV and σp of 0.1 Ω-1 cm-1. Stabilized solar cell structures with these thin films, FTO/CdS/Sb2S3/SnSe/C-Ag, showed open circuit voltage (Voc) of 0.60 V, short circuit current density (Jsc) of 5.51 mA/cm2 and power conversion efficiency (η) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, Jsc decreases to 4.77 mA/cm2.
4 citations
TL;DR: In this paper, thin films of AgSbS2 (150 nm) were prepared via chemical deposition using a solution mixture containing SbCl3, Na2S2O3 and AgNO3.
Abstract: Thin films of AgSbS2 (150 nm) are prepared (75 min at 40 °C) via chemical deposition using a solution mixture containing SbCl3, Na2S2O3 and AgNO3. As-deposited films are amorphous. When they are heated in nitrogen at 180-320 °C, crystalline cubic-AgSbS2 films are formed. They show an optical band gap 1.89 eV and photoconductivity 1.8x10-5 Ω-1cm-1. Silver antimony sulfide-selenide film, AgSb(SxSe1-x)2, is produced from the initial amorphous film when it is heated in presence of Se-vapor. XRD analysis confirms the formation of solid solution AgSbS1.25Se0.75 or AgSbSe2 depending on the extent of Se-vapor available during heating. SnO2:F/CdS/AgSbS2/C solar cell shows V oc 610 mV, J sc 0.88 mA/cm2 , FF 0.53 and η 0.28%. In SnO2:F/CdS/Sb2S3/AgSb(SxSe1-x)2/C solar cell, V oc is 582 mV, J sc 0.99 mA/cm2, FF 0.51 and η 0.29%.
1 citations
TL;DR: In this paper, a thin film of SnSe with 180 nm thickness was deposited at 26 o C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone.
Abstract: Chemically deposited thin film stack of SnSe-ZnSe-Cu 2-xSe was heated in nitrogen with Se vapor at 350-400 o C to produce Cu 2ZnSnSe 4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 o C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu 2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu 2ZnSnSe 4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 -1 cm -1 .