M. Tokairin

TL;DR: In this paper, a new concept of growing a polycrystalline Si ingot suitable for solar cells by casting based on the directional growth behavior of polycrystaline Si investigated using an in situ observation system.

TL;DR: In this article, a new concept for growing a polycrystalline silicon ingot suitable for solar cells by the casting method was proposed, which induced dendrite growth along the crucible wall in the initial stage of growth.

TL;DR: In this article, the formation mechanism of a faceted crystal-melt interface was investigated by in situ observation and it was directly proved that a wavy perturbation is introduced into a planar crystal melt interface and the perturbations results in zigzag facets.

TL;DR: In this paper, the pattern formation mechanism of a periodically faceted crystal-melt interface during the crystallization of Si was investigated by in situ observation, and it was directly proved that spacing between the reentrants of adjacent zigzag facets increases with the unification of adjacent facets when a facet with a higher growth velocity catches up with the one with a lower growth velocity.

TL;DR: In this article, the growth behavior of faceted Si crystals in grain boundary formation during crystallization was studied by the in situ observation technique, and the transition of the shape of the growing interface just before the impingement of two crystals was directly observed.