Journal ArticleDOI
Directional growth method to obtain high quality polycrystalline silicon from its melt
Kozo Fujiwara,Wugen Pan,Kohei Sawada,M. Tokairin,Noritaka Usami,Yoshitaro Nose,Akiko Nomura,Toetsu Shishido,Kazuo Nakajima +8 more
TLDR
In this article, a new concept for growing a polycrystalline silicon ingot suitable for solar cells by the casting method was proposed, which induced dendrite growth along the crucible wall in the initial stage of growth.About:
This article is published in Journal of Crystal Growth.The article was published on 2006-07-01. It has received 93 citations till now. The article focuses on the topics: Ingot & Grain boundary.read more
Citations
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Journal ArticleDOI
Development of high‐performance multicrystalline silicon for photovoltaic industry
TL;DR: In this article, the authors report the development of a high-performance multicrystalline silicon (mc-Si) based on directional solidification for defect control in photovoltaic (PV) industry.
Journal ArticleDOI
Grain control in directional solidification of photovoltaic silicon
TL;DR: In this paper, the progress in grain control of directional solidification (DS) multi-crystalline silicon (mc-Si) from lab-scale to industrial-scale experiments is reviewed.
Journal ArticleDOI
In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
Kozo Fujiwara,Kensaku Maeda,Noritaka Usami,Gen Sazaki,Yoshitaro Nose,Akiko Nomura,Toetsu Shishido,Kazuo Nakajima +7 more
TL;DR: In this paper, the critical undercooling for growing a faceted dendrite was experimentally determined to be Δ T ǫ = 10 K, and the parallel twins associated with faceted Dendrite growth were formed between grain boundaries and not at grain boundaries.
Journal ArticleDOI
The selection of key technologies by the silicon photovoltaic industry based on the Delphi method and AHP (analytic hierarchy process): Case study of China
TL;DR: In this paper, a Delphi-AHP framework is presented to analyze the potential space for each technology in the solar cell industrial chain, and 15 top key technologies including seven related to the fabrication of cells have been selected, and the technologies with great potential for cost and energy consumption are mainly distributed at the front-end of the industrial chain.
Journal ArticleDOI
Grain control using spot cooling in multi-crystalline silicon crystal growth
TL;DR: In this article, a graphite crucible with cooling spots was used to generate radial thermal gradients of the silicon melt for nucleation during directional solidification, and the effect of cooling spots on the grown ingot was studied by minority charge carrier lifetime mapping and electron back scattered diffraction of the grown crystals.
References
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Journal ArticleDOI
Growth mechanism of twin-related and twin-free facet Si dendrites
TL;DR: In this article, the growth directions of typical facet Si dendrites were determined to be 〈2 ǫ 1/1/1 /1/0, 》 1 ǔ 0/0/0, à 0 à 1/0 à and à 2 Ã, using an electron backscatter pattern apparatus.
Journal ArticleDOI
Grain growth behaviors of polycrystalline silicon during melt growth processes
TL;DR: In this article, the grain growth behaviors of polycrystalline silicon during directional growth from melt were investigated using an in situ monitoring system, and the authors suggested that the undercooling at the growth front is the key parameter to divide those growth behaviors.
Journal ArticleDOI
In-situ observations of melt growth behavior of polycrystalline silicon
TL;DR: In this paper, the growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope, which is able to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system.
Journal ArticleDOI
On black solar cells or the tetrahedral texturing of a silicon surface
F. Restrepo,C.E. Backus +1 more
TL;DR: In this article, an anistropic etching in ternary mixtures of KOH, H 2 O, and ethyl glycol is used to create SiC nucleation sites, which in turn facilitates the formation of a tetrahedral structure on the cell surface.
Journal ArticleDOI
Structural properties of directionally grown polycrystalline SiGe for solar cells
Kozo Fujiwara,Wugen Pan,Noritaka Usami,Kohei Sawada,Akiko Nomura,Toru Ujihara,Toetsu Shishido,Kazuo Nakajima +7 more
TL;DR: In this article, structural properties of polycrystalline SiGe grown by a directional growth method for solar cells were investigated and the average Ge composition was systematically changed in the range between 0 and 10 times.