M
Magdy Bayoumi
Researcher at University of Louisiana at Lafayette
Publications - 588
Citations - 7981
Magdy Bayoumi is an academic researcher from University of Louisiana at Lafayette. The author has contributed to research in topics: Motion estimation & Wireless sensor network. The author has an hindex of 37, co-authored 572 publications receiving 6780 citations. Previous affiliations of Magdy Bayoumi include Intel & King Fahd University of Petroleum and Minerals.
Papers
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Performance analysis of low-power 1-bit CMOS full adder cells
TL;DR: A performance analysis of 1-bit full-adder cell is presented, after the adder cell is anatomized into smaller modules, and several designs of each of them are developed, prototyped, simulated and analyzed.
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Design of Robust, Energy-Efficient Full Adders for Deep-Submicrometer Design Using Hybrid-CMOS Logic Style
TL;DR: The proposed full adder is energy efficient and outperforms several standard full adders without trading off driving capability and reliability and is based on a novel xor-xnor circuit that generates xor and xnor full-swing outputs simultaneously.
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Efficient Epileptic Seizure Prediction Based on Deep Learning
Hisham Daoud,Magdy Bayoumi +1 more
TL;DR: A novel patient-specific seizure prediction technique based on deep learning and applied to long-term scalp electroencephalogram (EEG) recordings is proposed to accurately detect the preictal brain state and differentiate it from the prevailing interictal state as early as possible and make it suitable for real time usage.
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High-performance and low-power conditional discharge flip-flop
TL;DR: In this paper, high-performance flip-flops are analyzed and classified into two categories: the conditional precharge and the conditional capture technologies, based on how to prevent or reduce the redundant internal switching activities.
Journal ArticleDOI
A novel high-performance CMOS 1-bit full-adder cell
A.M. Shams,Magdy Bayoumi +1 more
TL;DR: A novel 16-transistor CMOS 1-bit full-adder cell that uses the low-power designs of the XOR and XNOR gates, pass transistors, and transmission gates to offer higher speed and lower power consumption and energy savings up to 30% are achieved.