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A.M. Shams
Researcher at University of Louisiana at Lafayette
Publications - 25
Citations - 996
A.M. Shams is an academic researcher from University of Louisiana at Lafayette. The author has contributed to research in topics: Adder & Motion estimation. The author has an hindex of 11, co-authored 18 publications receiving 935 citations. Previous affiliations of A.M. Shams include Intel.
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Journal ArticleDOI
Performance analysis of low-power 1-bit CMOS full adder cells
TL;DR: A performance analysis of 1-bit full-adder cell is presented, after the adder cell is anatomized into smaller modules, and several designs of each of them are developed, prototyped, simulated and analyzed.
Journal ArticleDOI
A novel high-performance CMOS 1-bit full-adder cell
A.M. Shams,Magdy Bayoumi +1 more
TL;DR: A novel 16-transistor CMOS 1-bit full-adder cell that uses the low-power designs of the XOR and XNOR gates, pass transistors, and transmission gates to offer higher speed and lower power consumption and energy savings up to 30% are achieved.
Journal ArticleDOI
NEDA: a low-power high-performance DCT architecture
TL;DR: Finite word-length simulations demonstrate the viability and excellent performance of NEDA, a new DA architecture aimed at reducing the cost metrics of power and area while maintaining high speed and accuracy in digital signal processing (DSP) applications.
Proceedings ArticleDOI
A structured approach for designing low power adders
A.M. Shams,Magdy Bayoumi +1 more
TL;DR: The adder cell is anatomized into smaller modules using the proposed structured approach to construct 24 different 1-bit full adder cells that exhibit different power consumption, speed, area, and driving capability figures.
Proceedings ArticleDOI
Performance evaluation of 1-bit CMOS adder cells
A.M. Shams,Magdy Bayoumi +1 more
TL;DR: The proposed input test pattern proves the correct functionality, and produces correct time delay and power dissipation, and guarantees correct and fair comparison among different full adder cells.