Malle Krunks

TL;DR: In this article, it was shown that the main factors determining the parameters of ZnO films are the growth temperature and the indium concentration, and that the growth temperatures of 625-675 K, indium doping levels of 1-1.5 at% and precursor concentrations of 0.1-0.2 mol 1−1 are preferable to achieve ZnOs with optical and structural qualities as required for solar cell applications.

TL;DR: In this article, an extremely thin absorber (ETA) layer solar cell was realized by the chemical spray pyrolysis method, where a CuInS2 absorber was deposited onto a blocking layer coated ZnO nanorods grown on a transparent conductive oxide.

TL;DR: In this article, the structures of six copper-thiourea complexes were determined at room and also at low temperature, and the stochastic ratio of the resulting thin film was shown to be 1:3.

TL;DR: In this article, the authors used sol-gel spray pyrolysis to grow TiO 2 thin films onto silicon wafers at substrate temperatures between 315 and 500 °C using pulsed spray solution feed followed by annealing in the temperature interval from 500 to 800 °C in air.

TL;DR: In this article, the phase composition and crystal quality of copper indium sulfide (CIS) films grown by spray pyrolysis were determined using Raman spectroscopy and XRD methods.