M
Manuel Lozano
Researcher at Spanish National Research Council
Publications - 197
Citations - 3829
Manuel Lozano is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Detector & Silicon. The author has an hindex of 28, co-authored 194 publications receiving 3659 citations. Previous affiliations of Manuel Lozano include University of Bergen & Autonomous University of Barcelona.
Papers
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Proceedings ArticleDOI
Advanced model of silicon edgeless detector operation
E. M. Verbitskaya,I. Eremin,G. Ruggiero,Anna Cavallini,Antonio Castaldini,Giulio Pellegrini,Manuel Lozano,S. Golubkov,N. Egorov +8 more
TL;DR: In this paper, the potential and electric field distributions at the detector sensitive edge are considered within the framework of two models, the resistive and amorphous edge layers, and the surface potential distributions predicted by these models are compared to the experimental profiles measured by two methods, conductive microprobe technique and scanning transient current technique.
Proceedings ArticleDOI
Dependence of SPICE Level 3 model parameters with transistor size
TL;DR: In this article, an automated sequential parameter extraction procedure was applied to different MOS device sizes, for the SPICE Level 3 model, to investigate the transistor size influence on the extracted parameters.
Journal ArticleDOI
On-line determination of the degradation of ISFET chemical sensors
TL;DR: In this paper, the degradation of ion-sensitive field effect transistors (ISFETs) is investigated using a special electronic device and the good behaviour of the integrated sensors can be assessed if structures sensitive to the variations of dielectric and packaging quality are fabricated together with the ISFET.
Proceedings ArticleDOI
Development and performance of a gamma-ray imaging detector
J. L. Galvez,M. Hernanz,J. M. Álvarez,M. La Torre,L. Álvarez,D. Karelin,Manuel Lozano,Giulio Pellegrini,Miguel Ullan,E. Cabruja,Ricardo Martinez,M. Chmeissani,C. Puigdengoles +12 more
TL;DR: In this paper, a prototype of a gamma-ray imaging detector based on CdTe pixel detectors is developed, which consists of a stack of several layers of Cdte detectors with increasing thickness, in order to enhance the gamma radiation absorption in the Compton regime.
Journal ArticleDOI
Lithium ion-induced damage in silicon detectors
Andrea Candelori,Dario Bisello,Piero Giubilato,A. Kaminski,A. Litovchenko,Manuel Lozano,Miguel Ullan,Riccardo Rando,J. Wyss +8 more
TL;DR: In this article, the experimental radiation hardness factor has been determined to be 45.01, within 8.2% with the expected value, indicating that 58 MeV Li ions are a suitable radiation source for radiation hardness studies by ions heavier than protons for the future very high luminosity hadron colliders.