Statistics for Spatial Data.

The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.

/pdf/the-cms-experiment-at-the-cern-lhc-4d2umuzboo.pdf

The CMS experiment at the CERN LHC

The ATLAS detector as installed in its experimental cavern at point 1 at CERN is described in this paper. A brief overview of the expected performance of the detector when the Large Hadron Collider begins operation is also presented.

The ATLAS Experiment at the CERN Large Hadron Collider

This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.

http://absimage.aps.org/image/SES08/MWS_SES08-2008-020010.pdf

A positive temperature coefficient is the term which has been used to indicate that an increase in solubility occurs as the temperature is raised, whereas a negative coefficient indicates a decrease in solubility with rise in temperature.

Effect of Temperature

The D and L-Resistor types of the Kelvin cross resistor are the main test structures used to monitor contact resistance and contact resistivity. Despite the fact that the D type is more sensitive, both are widely used. A procedure is presented for the L type structure which permits the accurate, easy and fast extraction of contact resistivity, taking into account the effects of spreading currents. >

Extraction of contact resistivity on Kelvin L-resistor structures

A set of statistical analysis techniques applied to parametric on-wafer testing are presented. The suitability of these techniques within an automated environment is emphasised, as an aid tool to control process stability and quality. The analysis includes a data filtering step where a central data distribution is assumed. The proposed filtering scheme tends to minimize the kurtosis and skewness of the parameter distribution. Proposed spatial analysis techniques applied to filtered data include data winsorizing, and first and second order momenta calculation. These statistics treat wafer non-homogeneities with a minimum amount of data as a counterpart to the classic 2D contour or 3D plot.

http://ieeexplore.ieee.org/iel3/3902/11331/00513972.pdf

An automated approach to wafer distribution analysis

High oxygen concentration in silicon increases the resistance of radiation detectors to high radiation doses. Unfortunately, high-resistivity float zone (FZ) silicon, needed for radiation detectors, has too low an oxygen content. The solution to this is silicon oxygenation. There are different ways of incorporating oxygen into silicon. The most accepted one is by high-temperature diffusion from a thick SiO 2 layer. In this paper, we investigate the impact of this silicon oxygenation technique as well as the application of different gettering techniques to improve the minority carrier lifetime of high-resistivity FZ silicon substrates for radiation detectors. The minority carrier lifetimes before and after surface etching have been measured on samples subjected to different oxygenation and gettering treatments by using a quasi steady-state photoconductance technique. A lifetime improvement efficiency factor is defined for each treatment process. The lifetime efficiency factors behave independently, so that the lifetime efficiency factors associated with different sequential combinations of treatments can be estimated by a multiplicative combination. Different gettering techniques that improve or degrade the minority carrier lifetime are analyzed, and the best options for silicon radiation detector fabrication are determined. Oxygenated silicon with a minority carrier lifetime close to I ms can be obtained.

Effect of Combined Oxygenation and Gettering on Minority Carrier Lifetime in High-Resistivity FZ Silicon

The foreseen luminosity upgrade of the LHC will impose very strict conditions in the radiation hardness of the inner detectors. New ultra-radiation hard silicon position detectors are being developed for their use in the future LHC such as strip planar p-type and 3D.

Manuel Lozano

Papers

Extraction of contact resistivity on Kelvin L-resistor structures

An automated approach to wafer distribution analysis

Effect of Combined Oxygenation and Gettering on Minority Carrier Lifetime in High-Resistivity FZ Silicon

Ultra radiation hard silicon detectors for future experiments: 3D and p-type technologies

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