M
Marco Alvisi
Researcher at ENEA
Publications - 84
Citations - 1886
Marco Alvisi is an academic researcher from ENEA. The author has contributed to research in topics: Thin film & Carbon nanotube. The author has an hindex of 22, co-authored 84 publications receiving 1738 citations. Previous affiliations of Marco Alvisi include École Normale Supérieure.
Papers
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Enhancement of sensitivity in gas chemiresistors based on carbon nanotube surface functionalized with noble metal (Au, Pt) nanoclusters
Michele Penza,Gennaro Cassano,R. Rossi,Marco Alvisi,Antonella Rizzo,M.A. Signore,Th. Dikonimos,Emanuele Serra,Rossella Giorgi +8 more
TL;DR: In this paper, multiwalled carbon nanotube (MWCNT) films have been fabricated by using plasmaenhanced chemical vapor deposition system onto Cr-Au patterned alumina substrates, provided with 3nm thick Fe growth catalyst, for NO2 and NH3 gas sensing applications, at sensor temperature in the range of 100-250°C.
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Functional characterization of carbon nanotube networked films functionalized with tuned loading of Au nanoclusters for gas sensing applications
TL;DR: In this paper, the impact of the tailored load of gold (Au) nanoclusters functionalizing the sidewalls of the carbon nanotubes (CNTs) networks on gas sensing performance of a chemiresistor, operating at a working temperature in the range of 20-250°C.
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Pt- and Pd-nanoclusters functionalized carbon nanotubes networked films for sub-ppm gas sensors
TL;DR: In this paper, a gas chemiresistor, fabricated onto alumina using multi-walled carbon nanotubes (MWCNTs) networked films grown by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) technology, is described for high-performance gas detection, at an operating temperature of 200°C.
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Metal-modified and vertically aligned carbon nanotube sensors array for landfill gas monitoring applications
TL;DR: The metal-decorated and vertically aligned CNT sensor array is able to discriminate the NO(2) presence in the multicomponent mixture LFG and the recovery mechanisms in the CNT chemiresistors can be altered by a rapid heating pulse from room temperature to about 110 degrees C.
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HfO2 films with high laser damage threshold
Marco Alvisi,M. Di Giulio,S.G. Marrone,Maria Rita Perrone,M. L. Protopapa,Antonio Valentini,Lorenzo Vasanelli +6 more
TL;DR: In this paper, laser damage resistance studies have been performed at 308nm (XeCl laser) by the photoacoustic beam deflection technique, on hafnium dioxide (HfO2) thin films deposited on fused silica substrates either by the ion-assisted electron beam evaporation technique or by a dual-ion-beam sputtering technique.